DMN2990UFZ-7B Diodes Incorporated
Виробник: Diodes Incorporated
Description: MOSFET N-CH 20V 250MA 3DFN
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 250mA (Ta)
Rds On (Max) @ Id, Vgs: 990mOhm @ 100mA, 4.5V
Power Dissipation (Max): 320mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X2-DFN0606-3
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 55.2 pF @ 16 V
Description: MOSFET N-CH 20V 250MA 3DFN
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 250mA (Ta)
Rds On (Max) @ Id, Vgs: 990mOhm @ 100mA, 4.5V
Power Dissipation (Max): 320mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X2-DFN0606-3
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 55.2 pF @ 16 V
на замовлення 1640000 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
10000+ | 6.63 грн |
30000+ | 5.97 грн |
50000+ | 5.35 грн |
100000+ | 4.95 грн |
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Технічний опис DMN2990UFZ-7B Diodes Incorporated
Description: MOSFET N-CH 20V 250MA 3DFN, Packaging: Tape & Reel (TR), Package / Case: 3-XFDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 250mA (Ta), Rds On (Max) @ Id, Vgs: 990mOhm @ 100mA, 4.5V, Power Dissipation (Max): 320mW (Ta), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: X2-DFN0606-3, Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 0.5 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 55.2 pF @ 16 V.
Інші пропозиції DMN2990UFZ-7B за ціною від 4.87 грн до 34.66 грн
Фото | Назва | Виробник | Інформація |
Доступність |
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DMN2990UFZ-7B | Виробник : Diodes Incorporated | MOSFET 20V N-Ch Enh FET Dual .25A .32W 389pF |
на замовлення 19955 шт: термін постачання 21-30 дні (днів) |
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DMN2990UFZ-7B | Виробник : Diodes Incorporated |
Description: MOSFET N-CH 20V 250MA 3DFN Packaging: Cut Tape (CT) Package / Case: 3-XFDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 250mA (Ta) Rds On (Max) @ Id, Vgs: 990mOhm @ 100mA, 4.5V Power Dissipation (Max): 320mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: X2-DFN0606-3 Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 0.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 55.2 pF @ 16 V |
на замовлення 1650325 шт: термін постачання 21-31 дні (днів) |
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DMN2990UFZ-7B | Виробник : Diodes Inc | Trans MOSFET N-CH 20V 0.25A 3-Pin X2-DFN T/R |
товар відсутній |
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DMN2990UFZ-7B | Виробник : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 170mA; Idm: 0.8A; 320mW Kind of package: reel; tape Drain-source voltage: 20V Drain current: 0.17A On-state resistance: 2.4Ω Type of transistor: N-MOSFET Power dissipation: 0.32W Polarisation: unipolar Gate charge: 1nC Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: 0.8A Mounting: SMD Case: X2-DFN0606-3 кількість в упаковці: 10000 шт |
товар відсутній |
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DMN2990UFZ-7B | Виробник : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 170mA; Idm: 0.8A; 320mW Kind of package: reel; tape Drain-source voltage: 20V Drain current: 0.17A On-state resistance: 2.4Ω Type of transistor: N-MOSFET Power dissipation: 0.32W Polarisation: unipolar Gate charge: 1nC Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: 0.8A Mounting: SMD Case: X2-DFN0606-3 |
товар відсутній |