DMN3005LK3-13 Diodes Incorporated
Виробник: Diodes IncorporatedDescription: MOSFET N-CH 30V 14.5A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.5A (Ta)
Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V
Power Dissipation (Max): 1.68W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-252-3
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 46.9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4342 pF @ 15 V
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Технічний опис DMN3005LK3-13 Diodes Incorporated
Description: MOSFET N-CH 30V 14.5A TO252-3, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 14.5A (Ta), Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V, Power Dissipation (Max): 1.68W (Ta), Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: TO-252-3, Part Status: Discontinued at Digi-Key, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 46.9 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 4342 pF @ 15 V.
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DMN3005LK3-13 | Виробник : Diodes Incorporated |
Description: MOSFET N-CH 30V 14.5A TO252-3 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14.5A (Ta) Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V Power Dissipation (Max): 1.68W (Ta) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: TO-252-3 Part Status: Discontinued at Digi-Key Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 46.9 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 4342 pF @ 15 V |
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DMN3005LK3-13 | Виробник : Diodes Incorporated |
MOSFET N-Ch FET VDSS 30V VGSS 20V PD 1.68W |
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