DMN3016LDN-7 Diodes Incorporated
на замовлення 3191 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 41.22 грн |
| 10+ | 35.16 грн |
| 100+ | 22.84 грн |
| 500+ | 17.87 грн |
| 1000+ | 13.87 грн |
| 3000+ | 12.63 грн |
| 9000+ | 11.53 грн |
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Технічний опис DMN3016LDN-7 Diodes Incorporated
Description: MOSFET 2N-CH 30V 7.3A 8VDFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerWDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.1W, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 7.3A, Input Capacitance (Ciss) (Max) @ Vds: 1415pF @ 15V, Rds On (Max) @ Id, Vgs: 20mOhm @ 11A, 10V, Gate Charge (Qg) (Max) @ Vgs: 25.1nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: V-DFN3030-8 (Type J), Part Status: Active.
Інші пропозиції DMN3016LDN-7 за ціною від 14.6 грн до 41.81 грн
| Фото | Назва | Виробник | Інформація |
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DMN3016LDN-7 | Виробник : Diodes Incorporated |
 Description: MOSFET 2N-CH 30V 7.3A 8VDFNPackaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.1W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7.3A Input Capacitance (Ciss) (Max) @ Vds: 1415pF @ 15V Rds On (Max) @ Id, Vgs: 20mOhm @ 11A, 10V Gate Charge (Qg) (Max) @ Vgs: 25.1nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: V-DFN3030-8 (Type J) Part Status: Active |
на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
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| DMN3016LDN-7 | Виробник : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 7.3A; Idm: 45A; 1.6W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 7.3A Pulsed drain current: 45A Power dissipation: 1.6W Case: V-DFN3030-8 Gate-source voltage: ±20V On-state resistance: 24mΩ Mounting: SMD Gate charge: 25.1nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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DMN3016LDN-7 | Виробник : Diodes Incorporated |
Description: MOSFET 2N-CH 30V 7.3A 8VDFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.1W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7.3A Input Capacitance (Ciss) (Max) @ Vds: 1415pF @ 15V Rds On (Max) @ Id, Vgs: 20mOhm @ 11A, 10V Gate Charge (Qg) (Max) @ Vgs: 25.1nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: V-DFN3030-8 (Type J) Part Status: Active |
товар відсутній |
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| DMN3016LDN-7 | Виробник : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 7.3A; Idm: 45A; 1.6W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 7.3A Pulsed drain current: 45A Power dissipation: 1.6W Case: V-DFN3030-8 Gate-source voltage: ±20V On-state resistance: 24mΩ Mounting: SMD Gate charge: 25.1nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |