DMN4468LSS-13 Diodes Incorporated
Виробник: Diodes IncorporatedDescription: MOSFET N CH 30V 10A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 14mOhm @ 11.6A, 10V
Power Dissipation (Max): 1.52W (Ta)
Vgs(th) (Max) @ Id: 1.95V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 18.85 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 867 pF @ 10 V
на замовлення 1688 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 29.61 грн |
| 12+ | 24.55 грн |
| 100+ | 17.07 грн |
| 500+ | 12.5 грн |
| 1000+ | 10.16 грн |
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Технічний опис DMN4468LSS-13 Diodes Incorporated
Description: MOSFET N CH 30V 10A 8SOP, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 10A (Ta), Rds On (Max) @ Id, Vgs: 14mOhm @ 11.6A, 10V, Power Dissipation (Max): 1.52W (Ta), Vgs(th) (Max) @ Id: 1.95V @ 250µA, Supplier Device Package: 8-SO, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 18.85 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 867 pF @ 10 V.
Інші пропозиції DMN4468LSS-13 за ціною від 8.88 грн до 31.86 грн
| Фото | Назва | Виробник | Інформація |
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DMN4468LSS-13 | Виробник : Diodes Incorporated |
MOSFET N-CHAN ENHNCMNT MODE |
на замовлення 493 шт: термін постачання 21-30 дні (днів) |
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DMN4468LSS-13 | Виробник : Diodes Inc |
Trans MOSFET N-CH 30V 10A 8-Pin SOP T/R |
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DMN4468LSS-13 | Виробник : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 9A; Idm: 50A; 1.52W; SO8 Kind of package: reel; tape Drain-source voltage: 30V Drain current: 9A On-state resistance: 20mΩ Type of transistor: N-MOSFET Power dissipation: 1.52W Polarisation: unipolar Gate charge: 18.85nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 50A Mounting: SMD Case: SO8 кількість в упаковці: 1 шт |
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DMN4468LSS-13 | Виробник : Diodes Incorporated |
Description: MOSFET N CH 30V 10A 8SOP Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Rds On (Max) @ Id, Vgs: 14mOhm @ 11.6A, 10V Power Dissipation (Max): 1.52W (Ta) Vgs(th) (Max) @ Id: 1.95V @ 250µA Supplier Device Package: 8-SO Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 18.85 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 867 pF @ 10 V |
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DMN4468LSS-13 | Виробник : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 9A; Idm: 50A; 1.52W; SO8 Kind of package: reel; tape Drain-source voltage: 30V Drain current: 9A On-state resistance: 20mΩ Type of transistor: N-MOSFET Power dissipation: 1.52W Polarisation: unipolar Gate charge: 18.85nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 50A Mounting: SMD Case: SO8 |
товар відсутній |