DMNH6010SCTB-13 Diodes Incorporated
Виробник: Diodes IncorporatedDescription: MOSFET BVDSS: 41V~60V TO263 T&R
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 133A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 25A, 10V
Power Dissipation (Max): 5W (Ta), 375W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-263AB (D2PAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2692 pF @ 25 V
на замовлення 800 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 800+ | 112.43 грн |
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Технічний опис DMNH6010SCTB-13 Diodes Incorporated
Description: MOSFET BVDSS: 41V~60V TO263 T&R, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 133A (Tc), Rds On (Max) @ Id, Vgs: 10mOhm @ 25A, 10V, Power Dissipation (Max): 5W (Ta), 375W (Tc), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: TO-263AB (D2PAK), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2692 pF @ 25 V.
Інші пропозиції DMNH6010SCTB-13
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| DMNH6010SCTB-13 | Виробник : Diodes Inc |
MOSFET BVDSS: 41V60V TO263 T&R 0.8K |
товар відсутній |
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| DMNH6010SCTB-13 | Виробник : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 94A; Idm: 532A; 5W; TO263AB Mounting: SMD Case: TO263AB Kind of package: reel; tape Gate-source voltage: ±20V On-state resistance: 10mΩ Pulsed drain current: 532A Power dissipation: 5W Gate charge: 46nC Polarisation: unipolar Drain current: 94A Kind of channel: enhanced Drain-source voltage: 60V Type of transistor: N-MOSFET кількість в упаковці: 800 шт |
товар відсутній |
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| DMNH6010SCTB-13 | Виробник : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 94A; Idm: 532A; 5W; TO263AB Mounting: SMD Case: TO263AB Kind of package: reel; tape Gate-source voltage: ±20V On-state resistance: 10mΩ Pulsed drain current: 532A Power dissipation: 5W Gate charge: 46nC Polarisation: unipolar Drain current: 94A Kind of channel: enhanced Drain-source voltage: 60V Type of transistor: N-MOSFET |
товар відсутній |