DMP3160LQ-7 DIODES INCORPORATED
Виробник: DIODES INCORPORATEDCategory: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -2A; 1.08W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -2A
Power dissipation: 1.08W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
кількість в упаковці: 5 шт
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Технічний опис DMP3160LQ-7 DIODES INCORPORATED
Description: MOSFET BVDSS: 25V~30V SOT23 T&R, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta), Rds On (Max) @ Id, Vgs: 122mOhm @ 2.7A, 10V, Power Dissipation (Max): 1.08W (Ta), Vgs(th) (Max) @ Id: 2.1V @ 250µA, Supplier Device Package: SOT-23-3, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 384.4 pF @ 10 V.
Інші пропозиції DMP3160LQ-7
| Фото | Назва | Виробник | Інформація |
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Ціна без ПДВ |
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DMP3160LQ-7 | Виробник : Diodes Incorporated |
Description: MOSFET BVDSS: 25V~30V SOT23 T&R Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta) Rds On (Max) @ Id, Vgs: 122mOhm @ 2.7A, 10V Power Dissipation (Max): 1.08W (Ta) Vgs(th) (Max) @ Id: 2.1V @ 250µA Supplier Device Package: SOT-23-3 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 384.4 pF @ 10 V |
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| DMP3160LQ-7 | Виробник : Diodes Incorporated |
MOSFET MOSFET BVDSS: 25V~30V SOT23 T&R 3K |
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DMP3160LQ-7 | Виробник : DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -2A; 1.08W; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -2A Power dissipation: 1.08W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 0.19Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry |
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