DN2535N3-G-P003 Microchip Technology
на замовлення 1950 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 70.97 грн |
| 25+ | 57.2 грн |
| 100+ | 46.1 грн |
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Технічний опис DN2535N3-G-P003 Microchip Technology
Description: MOSFET N-CH 350V 120MA TO92, Packaging: Tape & Reel (TR), Package / Case: TO-226-3, TO-92-3 (TO-226AA), Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 120mA (Tj), Rds On (Max) @ Id, Vgs: 25Ohm @ 120mA, 0V, FET Feature: Depletion Mode, Power Dissipation (Max): 1W (Tc), Supplier Device Package: TO-92 (TO-226), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 0V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 350 V, Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 25 V.
Інші пропозиції DN2535N3-G-P003
| Фото | Назва | Виробник | Інформація |
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DN2535N3-G-P003 | Виробник : Microchip Technology |
 Trans MOSFET N-CH Si 350V 0.12A 3-Pin TO-92 T/R |
товар відсутній |
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| DN2535N3-G-P003 | Виробник : Microchip Technology |
Trans MOSFET N-CH Si 350V 0.12A 3-Pin TO-92 T/R |
товар відсутній |
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| DN2535N3-G-P003 | Виробник : MICROCHIP TECHNOLOGY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 350V; 120mA; Idm: 0.5A; 1W; TO92 Mounting: THT Kind of channel: depleted Gate-source voltage: ±20V Pulsed drain current: 0.5A Case: TO92 Drain-source voltage: 350V Drain current: 0.12A On-state resistance: 25Ω Type of transistor: N-MOSFET Power dissipation: 1W Polarisation: unipolar Kind of package: reel; tape кількість в упаковці: 1 шт |
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DN2535N3-G-P003 | Виробник : Microchip Technology |
Description: MOSFET N-CH 350V 120MA TO92 Packaging: Tape & Reel (TR) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120mA (Tj) Rds On (Max) @ Id, Vgs: 25Ohm @ 120mA, 0V FET Feature: Depletion Mode Power Dissipation (Max): 1W (Tc) Supplier Device Package: TO-92 (TO-226) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 0V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 350 V Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 25 V |
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DN2535N3-G-P003 | Виробник : Microchip Technology |
Description: MOSFET N-CH 350V 120MA TO92 Packaging: Cut Tape (CT) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120mA (Tj) Rds On (Max) @ Id, Vgs: 25Ohm @ 120mA, 0V FET Feature: Depletion Mode Power Dissipation (Max): 1W (Tc) Supplier Device Package: TO-92 (TO-226) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 0V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 350 V Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 25 V |
товар відсутній |
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| DN2535N3-G-P003 | Виробник : MICROCHIP TECHNOLOGY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 350V; 120mA; Idm: 0.5A; 1W; TO92 Mounting: THT Kind of channel: depleted Gate-source voltage: ±20V Pulsed drain current: 0.5A Case: TO92 Drain-source voltage: 350V Drain current: 0.12A On-state resistance: 25Ω Type of transistor: N-MOSFET Power dissipation: 1W Polarisation: unipolar Kind of package: reel; tape |
товар відсутній |