Технічний опис DS1250WP-100IND+ Maxim Integrated
Description: IC NVSRAM 4MBIT PAR 34PWRCAP, Packaging: Tray, Package / Case: 34-PowerCap™ Module, Mounting Type: Surface Mount, Memory Size: 4Mbit, Memory Type: Non-Volatile, Operating Temperature: -40°C ~ 85°C (TA), Voltage - Supply: 3V ~ 3.6V, Technology: NVSRAM (Non-Volatile SRAM), Memory Format: NVSRAM, Supplier Device Package: 34-PowerCap Module, Write Cycle Time - Word, Page: 100ns, Memory Interface: Parallel, Access Time: 100 ns, Memory Organization: 512K x 8, DigiKey Programmable: Not Verified.
Інші пропозиції DS1250WP-100IND+
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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| DS1250WP-100IND+ | Виробник : Maxim |
 NVRAM NVSRAM Parallel 4Mbit 3.3V 34-Pin PowerCap Module |
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DS1250WP-100IND+ | Виробник : Analog Devices Inc./Maxim Integrated |
Description: IC NVSRAM 4MBIT PAR 34PWRCAP Packaging: Tray Package / Case: 34-PowerCap™ Module Mounting Type: Surface Mount Memory Size: 4Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 3V ~ 3.6V Technology: NVSRAM (Non-Volatile SRAM) Memory Format: NVSRAM Supplier Device Package: 34-PowerCap Module Write Cycle Time - Word, Page: 100ns Memory Interface: Parallel Access Time: 100 ns Memory Organization: 512K x 8 DigiKey Programmable: Not Verified |
товар відсутній |
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DS1250WP-100IND+ | Виробник : Analog Devices Inc./Maxim Integrated |
Description: IC NVSRAM 4MBIT PAR 34PWRCAP Packaging: Tray Package / Case: 34-PowerCap™ Module Mounting Type: Surface Mount Memory Size: 4Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 3V ~ 3.6V Technology: NVSRAM (Non-Volatile SRAM) Memory Format: NVSRAM Supplier Device Package: 34-PowerCap Module Write Cycle Time - Word, Page: 100ns Memory Interface: Parallel Access Time: 100 ns Memory Organization: 512K x 8 DigiKey Programmable: Not Verified |
товар відсутній |