EPC2037
Виробник: EPCDescription: GANFET N-CH 100V 1.7A DIE
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
Rds On (Max) @ Id, Vgs: 550mOhm @ 100mA, 5V
Vgs(th) (Max) @ Id: 2.5V @ 80µA
Supplier Device Package: Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 0.12 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 14 pF @ 50 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 50
на замовлення 22582 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 90.51 грн |
| 10+ | 70.83 грн |
| 100+ | 55.11 грн |
| 500+ | 43.84 грн |
| 1000+ | 35.71 грн |
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Технічний опис EPC2037 EPC
Description: GANFET N-CH 100V 1.7A DIE, Packaging: Tape & Reel (TR), Package / Case: Die, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 150°C (TJ), Technology: GaNFET (Gallium Nitride), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta), Rds On (Max) @ Id, Vgs: 550mOhm @ 100mA, 5V, Vgs(th) (Max) @ Id: 2.5V @ 80µA, Supplier Device Package: Die, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 5V, Vgs (Max): +6V, -4V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 0.12 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 14 pF @ 50 V, Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5, Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 50.
Інші пропозиції EPC2037
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
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EPC2037 Код товару: 179458 |
Транзистори > Польові N-канальні |
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| EPC2037 | Виробник : Efficient Power Conversion |
Trans MOSFET N-CH GaN 100V 1.7A 4-Pin Die T/R |
товар відсутній |
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EPC2037 | Виробник : EPC |
Description: GANFET N-CH 100V 1.7A DIE Packaging: Tape & Reel (TR) Package / Case: Die Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta) Rds On (Max) @ Id, Vgs: 550mOhm @ 100mA, 5V Vgs(th) (Max) @ Id: 2.5V @ 80µA Supplier Device Package: Die Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): +6V, -4V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 0.12 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 14 pF @ 50 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 50 |
товар відсутній |