FCH125N60E Fairchild Semiconductor
Виробник: Fairchild Semiconductor
Description: MOSFET N-CH 600V 29A TO247-3
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 14.5A, 10V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2990 pF @ 380 V
Description: MOSFET N-CH 600V 29A TO247-3
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 14.5A, 10V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2990 pF @ 380 V
на замовлення 250 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
120+ | 166.96 грн |
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Технічний опис FCH125N60E Fairchild Semiconductor
Description: MOSFET N-CH 600V 29A TO247-3, Packaging: Bulk, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 29A (Tc), Rds On (Max) @ Id, Vgs: 125mOhm @ 14.5A, 10V, Power Dissipation (Max): 278W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 250µA, Supplier Device Package: TO-247, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2990 pF @ 380 V.
Інші пропозиції FCH125N60E
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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FCH125N60E | Виробник : ON Semiconductor |
на замовлення 432 шт: термін постачання 14-28 дні (днів) |
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FCH125N60E | Виробник : ON Semiconductor | Trans MOSFET N-CH 600V 29A 3-Pin(3+Tab) TO-247 Tube |
товар відсутній |
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FCH125N60E | Виробник : ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 18A; Idm: 87A; 278W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 18A Pulsed drain current: 87A Power dissipation: 278W Case: TO247 Gate-source voltage: ±20V On-state resistance: 0.102Ω Mounting: THT Gate charge: 75nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
товар відсутній |
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FCH125N60E | Виробник : onsemi / Fairchild | MOSFET 600V 29A N-Chnl SuperFET Easy-Drive |
товар відсутній |
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FCH125N60E | Виробник : ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 18A; Idm: 87A; 278W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 18A Pulsed drain current: 87A Power dissipation: 278W Case: TO247 Gate-source voltage: ±20V On-state resistance: 0.102Ω Mounting: THT Gate charge: 75nC Kind of package: tube Kind of channel: enhanced |
товар відсутній |