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FCPF400N80ZL1-F154

FCPF400N80ZL1-F154 onsemi


fcpf400n80zl1cn-d.pdf Виробник: onsemi
Description: MOSFET N-CH 800V 11A TO220F-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tj)
Rds On (Max) @ Id, Vgs: 400mOhm @ 5.5A, 10V
Power Dissipation (Max): 35.7W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.1mA
Supplier Device Package: TO-220F-3
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 100 V
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Технічний опис FCPF400N80ZL1-F154 onsemi

Description: MOSFET N-CH 800V 11A TO220F-3, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 11A (Tj), Rds On (Max) @ Id, Vgs: 400mOhm @ 5.5A, 10V, Power Dissipation (Max): 35.7W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 1.1mA, Supplier Device Package: TO-220F-3, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 800 V, Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 100 V.

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FCPF400N80ZL1-F154 Виробник : onsemi FCPF400N80ZL1_F154_D-2312117.pdf MOSFET SF2 800V 400MOHM E TO220F
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