FDME1023PZT onsemi
Виробник: onsemi
Description: MOSFET 2P-CH 20V 2.6A 6MICROFET
Packaging: Tape & Reel (TR)
Package / Case: 6-UFDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 600mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.6A
Input Capacitance (Ciss) (Max) @ Vds: 405pF @ 10V
Rds On (Max) @ Id, Vgs: 142mOhm @ 2.3A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 7.7nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-MicroFET (1.6x1.6)
Description: MOSFET 2P-CH 20V 2.6A 6MICROFET
Packaging: Tape & Reel (TR)
Package / Case: 6-UFDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 600mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.6A
Input Capacitance (Ciss) (Max) @ Vds: 405pF @ 10V
Rds On (Max) @ Id, Vgs: 142mOhm @ 2.3A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 7.7nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-MicroFET (1.6x1.6)
на замовлення 355000 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
5000+ | 24.73 грн |
10000+ | 22.92 грн |
25000+ | 22.21 грн |
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Технічний опис FDME1023PZT onsemi
Description: MOSFET 2P-CH 20V 2.6A 6MICROFET, Packaging: Tape & Reel (TR), Package / Case: 6-UFDFN Exposed Pad, Mounting Type: Surface Mount, Configuration: 2 P-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 600mW, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 2.6A, Input Capacitance (Ciss) (Max) @ Vds: 405pF @ 10V, Rds On (Max) @ Id, Vgs: 142mOhm @ 2.3A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 7.7nC @ 4.5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: 6-MicroFET (1.6x1.6).
Інші пропозиції FDME1023PZT за ціною від 20.78 грн до 61.23 грн
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||||||||||||
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FDME1023PZT | Виробник : onsemi / Fairchild | MOSFET 20V Dual P-Channel PowerTrench |
на замовлення 60598 шт: термін постачання 21-30 дні (днів) |
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FDME1023PZT | Виробник : onsemi |
Description: MOSFET 2P-CH 20V 2.6A 6MICROFET Packaging: Cut Tape (CT) Package / Case: 6-UFDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 600mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2.6A Input Capacitance (Ciss) (Max) @ Vds: 405pF @ 10V Rds On (Max) @ Id, Vgs: 142mOhm @ 2.3A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 7.7nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 6-MicroFET (1.6x1.6) |
на замовлення 358483 шт: термін постачання 21-31 дні (днів) |
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FDME1023PZT | Виробник : ONSEMI |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; unipolar; -20V; -2.6A; Idm: -6A; 1.4W Mounting: SMD Pulsed drain current: -6A Power dissipation: 1.4W Gate charge: 7.7nC Polarisation: unipolar Drain current: -2.6A Kind of channel: enhanced Drain-source voltage: -20V Type of transistor: P-MOSFET x2 Gate-source voltage: ±8V Kind of package: reel; tape Case: MicroFET On-state resistance: 530mΩ кількість в упаковці: 1 шт |
товар відсутній |
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FDME1023PZT | Виробник : ONSEMI |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; unipolar; -20V; -2.6A; Idm: -6A; 1.4W Mounting: SMD Pulsed drain current: -6A Power dissipation: 1.4W Gate charge: 7.7nC Polarisation: unipolar Drain current: -2.6A Kind of channel: enhanced Drain-source voltage: -20V Type of transistor: P-MOSFET x2 Gate-source voltage: ±8V Kind of package: reel; tape Case: MicroFET On-state resistance: 530mΩ |
товар відсутній |