FDML7610S onsemi
Виробник: onsemiDescription: MOSFET 2N-CH 30V 12A/17A 8MLP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 800mW, 900mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 12A, 17A
Input Capacitance (Ciss) (Max) @ Vds: 1750pF @ 15V
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 12A, 10V
Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-MLP (3x4.5)
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 61.55 грн |
Відгуки про товар
Написати відгук
Технічний опис FDML7610S onsemi
Description: MOSFET 2N-CH 30V 12A/17A 8MLP, Packaging: Tape & Reel (TR), Package / Case: 8-PowerWDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 800mW, 900mW, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 12A, 17A, Input Capacitance (Ciss) (Max) @ Vds: 1750pF @ 15V, Rds On (Max) @ Id, Vgs: 7.5mOhm @ 12A, 10V, Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: 8-MLP (3x4.5).
Інші пропозиції FDML7610S за ціною від 51.47 грн до 136.3 грн
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
FDML7610S | Виробник : onsemi |
Description: MOSFET 2N-CH 30V 12A/17A 8MLP Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 800mW, 900mW Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 12A, 17A Input Capacitance (Ciss) (Max) @ Vds: 1750pF @ 15V Rds On (Max) @ Id, Vgs: 7.5mOhm @ 12A, 10V Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-MLP (3x4.5) |
на замовлення 4400 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
 |
FDML7610S | Виробник : onsemi / Fairchild |
MOSFET 30V N-Channel PowerTrench |
на замовлення 2499 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||||
| FDML7610S | Виробник : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 30/28A; Idm: 40A; 2.1/2.2W Case: MLP8 Mounting: SMD Kind of package: reel; tape Pulsed drain current: 40A Power dissipation: 2.1/2.2W Gate charge: 28/60nC Polarisation: unipolar Drain current: 30/28A Kind of channel: enhanced Drain-source voltage: 30V Type of transistor: N-MOSFET Gate-source voltage: ±20V On-state resistance: 12/6mΩ кількість в упаковці: 1 шт |
товар відсутній |
||||||||||||||||||
| FDML7610S | Виробник : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 30/28A; Idm: 40A; 2.1/2.2W Case: MLP8 Mounting: SMD Kind of package: reel; tape Pulsed drain current: 40A Power dissipation: 2.1/2.2W Gate charge: 28/60nC Polarisation: unipolar Drain current: 30/28A Kind of channel: enhanced Drain-source voltage: 30V Type of transistor: N-MOSFET Gate-source voltage: ±20V On-state resistance: 12/6mΩ |
товар відсутній |