FDMS8027S Fairchild Semiconductor
Виробник: Fairchild SemiconductorDescription: POWER FIELD-EFFECT TRANSISTOR, 1
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 22A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 18A, 10V
Power Dissipation (Max): 2.5W (Ta), 36W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1815 pF @ 15 V
на замовлення 18985 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 347+ | 57.4 грн |
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Технічний опис FDMS8027S Fairchild Semiconductor
Description: MOSFET N-CH 30V 18A/22A 8PQFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 22A (Tc), Rds On (Max) @ Id, Vgs: 5mOhm @ 18A, 10V, Power Dissipation (Max): 2.5W (Ta), 36W (Tc), Vgs(th) (Max) @ Id: 3V @ 1mA, Supplier Device Package: 8-PQFN (5x6), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1815 pF @ 15 V.
Інші пропозиції FDMS8027S за ціною від 49.47 грн до 127.92 грн
| Фото | Назва | Виробник | Інформація |
Доступність |
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FDMS8027S | Виробник : onsemi |
Description: MOSFET N-CH 30V 18A/22A 8PQFN Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 22A (Tc) Rds On (Max) @ Id, Vgs: 5mOhm @ 18A, 10V Power Dissipation (Max): 2.5W (Ta), 36W (Tc) Vgs(th) (Max) @ Id: 3V @ 1mA Supplier Device Package: 8-PQFN (5x6) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1815 pF @ 15 V |
на замовлення 2970 шт: термін постачання 21-31 дні (днів) |
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FDMS8027S | Виробник : onsemi / Fairchild |
MOSFET 30V N-Channel PowerTrench SyncFET |
на замовлення 3851 шт: термін постачання 21-30 дні (днів) |
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FDMS8027S | Виробник : ON Semiconductor |
Trans MOSFET N-CH Si 30V 18A 8-Pin PQFN EP T/R |
товар відсутній |
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| FDMS8027S | Виробник : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 22A; Idm: 100A; 36W; Power56 Mounting: SMD Drain-source voltage: 30V Drain current: 22A On-state resistance: 6.8mΩ Type of transistor: N-MOSFET Power dissipation: 36W Polarisation: unipolar Kind of package: reel; tape Gate charge: 31nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 100A Case: Power56 кількість в упаковці: 1 шт |
товар відсутній |
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FDMS8027S | Виробник : onsemi |
Description: MOSFET N-CH 30V 18A/22A 8PQFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 22A (Tc) Rds On (Max) @ Id, Vgs: 5mOhm @ 18A, 10V Power Dissipation (Max): 2.5W (Ta), 36W (Tc) Vgs(th) (Max) @ Id: 3V @ 1mA Supplier Device Package: 8-PQFN (5x6) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1815 pF @ 15 V |
товар відсутній |
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| FDMS8027S | Виробник : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 22A; Idm: 100A; 36W; Power56 Mounting: SMD Drain-source voltage: 30V Drain current: 22A On-state resistance: 6.8mΩ Type of transistor: N-MOSFET Power dissipation: 36W Polarisation: unipolar Kind of package: reel; tape Gate charge: 31nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 100A Case: Power56 |
товар відсутній |