FDMS8050ET30 onsemi
Виробник: onsemiDescription: MOSFET N-CH 30V 55A/423A POWER56
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Ta), 423A (Tc)
Rds On (Max) @ Id, Vgs: 0.65mOhm @ 55A, 10V
Power Dissipation (Max): 3.3W (Ta), 180W (Tc)
Vgs(th) (Max) @ Id: 3V @ 750µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 285 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 22610 pF @ 15 V
на замовлення 5703 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 194.34 грн |
| 10+ | 157.28 грн |
| 100+ | 127.2 грн |
| 500+ | 116.76 грн |
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Технічний опис FDMS8050ET30 onsemi
Description: MOSFET N-CH 30V 55A/423A POWER56, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 55A (Ta), 423A (Tc), Rds On (Max) @ Id, Vgs: 0.65mOhm @ 55A, 10V, Power Dissipation (Max): 3.3W (Ta), 180W (Tc), Vgs(th) (Max) @ Id: 3V @ 750µA, Supplier Device Package: 8-PQFN (5x6), Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 285 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 22610 pF @ 15 V.
Інші пропозиції FDMS8050ET30 за ціною від 123.52 грн до 196.5 грн
| Фото | Назва | Виробник | Інформація |
Доступність |
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FDMS8050ET30 | Виробник : onsemi / Fairchild |
MOSFET N-Channel PowerTrench MOSFET |
на замовлення 9000 шт: термін постачання 21-30 дні (днів) |
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FDMS8050ET30 | Виробник : ON Semiconductor |
Trans MOSFET N-CH 30V 55A 8-Pin Power 56 EP T/R |
товар відсутній |
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| FDMS8050ET30 | Виробник : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 299A; Idm: 1914A; 180W; Power56 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 299A Pulsed drain current: 1914A Power dissipation: 180W Case: Power56 Gate-source voltage: ±20V On-state resistance: 0.9mΩ Mounting: SMD Gate charge: 285nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
товар відсутній |
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FDMS8050ET30 | Виробник : onsemi |
Description: MOSFET N-CH 30V 55A/423A POWER56 Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 55A (Ta), 423A (Tc) Rds On (Max) @ Id, Vgs: 0.65mOhm @ 55A, 10V Power Dissipation (Max): 3.3W (Ta), 180W (Tc) Vgs(th) (Max) @ Id: 3V @ 750µA Supplier Device Package: 8-PQFN (5x6) Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 285 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 22610 pF @ 15 V |
товар відсутній |
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| FDMS8050ET30 | Виробник : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 299A; Idm: 1914A; 180W; Power56 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 299A Pulsed drain current: 1914A Power dissipation: 180W Case: Power56 Gate-source voltage: ±20V On-state resistance: 0.9mΩ Mounting: SMD Gate charge: 285nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |