FDMS8333L onsemi / Fairchild
на замовлення 35829 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 78.67 грн |
| 10+ | 66.72 грн |
| 100+ | 47.53 грн |
| 500+ | 40.79 грн |
| 1000+ | 35.72 грн |
| 3000+ | 33.78 грн |
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Технічний опис FDMS8333L onsemi / Fairchild
Description: MOSFET N CH 40V 22A POWER 56, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 76A (Tc), Rds On (Max) @ Id, Vgs: 3.1mOhm @ 22A, 10V, Power Dissipation (Max): 2.5W (Ta), 69W (Tc), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: 8-PQFN (5x6), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4545 pF @ 20 V.
Інші пропозиції FDMS8333L за ціною від 39.23 грн до 95.33 грн
| Фото | Назва | Виробник | Інформація |
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FDMS8333L | Виробник : onsemi |
 Description: MOSFET N CH 40V 22A POWER 56Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 76A (Tc) Rds On (Max) @ Id, Vgs: 3.1mOhm @ 22A, 10V Power Dissipation (Max): 2.5W (Ta), 69W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-PQFN (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4545 pF @ 20 V |
на замовлення 2609 шт: термін постачання 21-31 дні (днів) |
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FDMS8333L | Виробник : ON Semiconductor |
Trans MOSFET N-CH Si 40V 22A 8-Pin PQFN EP T/R |
товар відсутній |
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| FDMS8333L | Виробник : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 76A; Idm: 250A; 69W; Power56 Drain-source voltage: 40V Drain current: 76A On-state resistance: 4.7mΩ Type of transistor: N-MOSFET Power dissipation: 69W Polarisation: unipolar Kind of package: reel; tape Gate charge: 64nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 250A Mounting: SMD Case: Power56 кількість в упаковці: 1 шт |
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FDMS8333L | Виробник : onsemi |
Description: MOSFET N CH 40V 22A POWER 56 Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 76A (Tc) Rds On (Max) @ Id, Vgs: 3.1mOhm @ 22A, 10V Power Dissipation (Max): 2.5W (Ta), 69W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-PQFN (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4545 pF @ 20 V |
товар відсутній |
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| FDMS8333L | Виробник : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 76A; Idm: 250A; 69W; Power56 Drain-source voltage: 40V Drain current: 76A On-state resistance: 4.7mΩ Type of transistor: N-MOSFET Power dissipation: 69W Polarisation: unipolar Kind of package: reel; tape Gate charge: 64nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 250A Mounting: SMD Case: Power56 |
товар відсутній |