FDMS8560S ON Semiconductor / Fairchild
на замовлення 8785 шт:
термін постачання 21-30 дні (днів)
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Технічний опис FDMS8560S ON Semiconductor / Fairchild
Description: MOSFET N-CH 25V 30A/70A 8PQFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 70A (Tc), Rds On (Max) @ Id, Vgs: 1.8mOhm @ 30A, 10V, Power Dissipation (Max): 2.5W (Ta), 65W (Tc), Vgs(th) (Max) @ Id: 2.2V @ 1mA, Supplier Device Package: 8-PQFN (5x6), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 25 V, Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4350 pF @ 13 V.
Інші пропозиції FDMS8560S
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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| FDMS8560S | Виробник : ONSEMI |
 Description: ONSEMI - FDMS8560S - FDMS8560S, SINGLE MOSFETStariffCode: 85412900 productTraceability: Yes-Date/Lot Code rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) |
на замовлення 151 шт: термін постачання 21-31 дні (днів) |
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FDMS8560S | Виробник : ON Semiconductor |
Trans MOSFET N-CH Si 25V 30A 8-Pin PQFN EP T/R |
товар відсутній |
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FDMS8560S | Виробник : onsemi |
Description: MOSFET N-CH 25V 30A/70A 8PQFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 70A (Tc) Rds On (Max) @ Id, Vgs: 1.8mOhm @ 30A, 10V Power Dissipation (Max): 2.5W (Ta), 65W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 1mA Supplier Device Package: 8-PQFN (5x6) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4350 pF @ 13 V |
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FDMS8560S | Виробник : onsemi |
Description: MOSFET N-CH 25V 30A/70A 8PQFN Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 70A (Tc) Rds On (Max) @ Id, Vgs: 1.8mOhm @ 30A, 10V Power Dissipation (Max): 2.5W (Ta), 65W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 1mA Supplier Device Package: 8-PQFN (5x6) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4350 pF @ 13 V |
товар відсутній |