FDMS86300DC onsemi / Fairchild
на замовлення 53316 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 213.12 грн |
| 10+ | 174.93 грн |
| 100+ | 120.89 грн |
| 500+ | 102.3 грн |
| 1000+ | 87.02 грн |
| 3000+ | 81.7 грн |
| 6000+ | 79.71 грн |
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Технічний опис FDMS86300DC onsemi / Fairchild
Description: MOSFET N-CH 80V 24A/76A DLCOOL56, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 76A (Tc), Rds On (Max) @ Id, Vgs: 3.1mOhm @ 24A, 10V, Power Dissipation (Max): 3.2W (Ta), 125W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 250µA, Supplier Device Package: 8-PQFN (5x6), Drive Voltage (Max Rds On, Min Rds On): 8V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 101 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 7005 pF @ 40 V.
Інші пропозиції FDMS86300DC
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
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FDMS86300DC | Виробник : ON Semiconductor |
 Trans MOSFET N-CH 80V 24A 8-Pin Power 56 T/R |
товар відсутній |
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FDMS86300DC | Виробник : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 110A; 125W; DFN8 Mounting: SMD Case: DFN8 Kind of package: reel; tape Power dissipation: 125W Gate-source voltage: ±20V Type of transistor: N-MOSFET Drain-source voltage: 80V Drain current: 110A On-state resistance: 5mΩ Polarisation: unipolar Kind of channel: enhanced |
товар відсутній |
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FDMS86300DC | Виробник : ON Semiconductor |
Trans MOSFET N-CH 80V 24A 8-Pin Power 56 T/R |
товар відсутній |
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FDMS86300DC | Виробник : ON Semiconductor |
Trans MOSFET N-CH 80V 24A 8-Pin Power 56 T/R |
товар відсутній |
|
 |
FDMS86300DC | Виробник : onsemi |
Description: MOSFET N-CH 80V 24A/76A DLCOOL56 Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 76A (Tc) Rds On (Max) @ Id, Vgs: 3.1mOhm @ 24A, 10V Power Dissipation (Max): 3.2W (Ta), 125W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: 8-PQFN (5x6) Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 101 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7005 pF @ 40 V |
товар відсутній |
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FDMS86300DC | Виробник : onsemi |
Description: MOSFET N-CH 80V 24A/76A DLCOOL56 Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 76A (Tc) Rds On (Max) @ Id, Vgs: 3.1mOhm @ 24A, 10V Power Dissipation (Max): 3.2W (Ta), 125W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: 8-PQFN (5x6) Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 101 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7005 pF @ 40 V |
товар відсутній |
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FDMS86300DC | Виробник : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 110A; 125W; DFN8 Mounting: SMD Case: DFN8 Kind of package: reel; tape Power dissipation: 125W Gate-source voltage: ±20V Type of transistor: N-MOSFET Drain-source voltage: 80V Drain current: 110A On-state resistance: 5mΩ Polarisation: unipolar Kind of channel: enhanced |
товар відсутній |