FDS6699S ON Semiconductor / Fairchild
на замовлення 2756 шт:
термін постачання 21-30 дні (днів)
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Технічний опис FDS6699S ON Semiconductor / Fairchild
Description: MOSFET N-CH 30V 21A 8SOIC, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 21A (Ta), Rds On (Max) @ Id, Vgs: 3.6mOhm @ 21A, 10V, Power Dissipation (Max): 2.5W (Ta), Vgs(th) (Max) @ Id: 3V @ 1mA, Supplier Device Package: 8-SOIC, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3610 pF @ 15 V.
Інші пропозиції FDS6699S за ціною від 50.45 грн до 50.45 грн
| Фото | Назва | Виробник | Інформація |
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| FDS6699S | Виробник : Fairchild |
 Transistor N-Channel MOSFET; 30V; 20V; 5,6mOhm; 21A; 2,5W; -55°C ~ 150°C; FDS6699S TFDS6699sкількість в упаковці: 10 шт |
на замовлення 40 шт: термін постачання 28-31 дні (днів) |
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FDS6699S | Виробник : ON Semiconductor |
Trans MOSFET N-CH 30V 21A 8-Pin SOIC T/R |
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FDS6699S | Виробник : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 21A; 2.5W; SO8 Type of transistor: N-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: 30V Drain current: 21A Power dissipation: 2.5W Case: SO8 Gate-source voltage: ±20V On-state resistance: 3.1Ω Mounting: SMD Gate charge: 91nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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FDS6699S | Виробник : onsemi |
Description: MOSFET N-CH 30V 21A 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21A (Ta) Rds On (Max) @ Id, Vgs: 3.6mOhm @ 21A, 10V Power Dissipation (Max): 2.5W (Ta) Vgs(th) (Max) @ Id: 3V @ 1mA Supplier Device Package: 8-SOIC Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3610 pF @ 15 V |
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FDS6699S | Виробник : onsemi |
Description: MOSFET N-CH 30V 21A 8SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21A (Ta) Rds On (Max) @ Id, Vgs: 3.6mOhm @ 21A, 10V Power Dissipation (Max): 2.5W (Ta) Vgs(th) (Max) @ Id: 3V @ 1mA Supplier Device Package: 8-SOIC Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3610 pF @ 15 V |
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FDS6699S | Виробник : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 21A; 2.5W; SO8 Type of transistor: N-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: 30V Drain current: 21A Power dissipation: 2.5W Case: SO8 Gate-source voltage: ±20V On-state resistance: 3.1Ω Mounting: SMD Gate charge: 91nC Kind of package: reel; tape Kind of channel: enhanced |
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