FDS6900AS ONSEMI
Виробник: ONSEMIDescription: ONSEMI - FDS6900AS - MOSFET, DUAL, N, SMD, SO-8
tariffCode: 85412900
productTraceability: Yes-Date/Lot Code
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
на замовлення 2841 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 41.39 грн |
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Технічний опис FDS6900AS ONSEMI
Description: SMALL SIGNAL FIELD-EFFECT TRANSI, Packaging: Bulk, Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 900mW, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 6.9A, 8.2A, Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 15V, Rds On (Max) @ Id, Vgs: 27mOhm @ 6.9A, 10V, Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: 8-SOIC, Part Status: Active.
Інші пропозиції FDS6900AS за ціною від 42.05 грн до 42.05 грн
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||
|---|---|---|---|---|---|---|---|---|---|
| FDS6900AS | Виробник : Fairchild Semiconductor |
Description: SMALL SIGNAL FIELD-EFFECT TRANSI Packaging: Bulk Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 900mW Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6.9A, 8.2A Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 15V Rds On (Max) @ Id, Vgs: 27mOhm @ 6.9A, 10V Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active |
на замовлення 569 шт: термін постачання 21-31 дні (днів) |
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FDS6900AS Код товару: 44563 |
Транзистори > Польові N-канальні |
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FDS6900AS | Виробник : ON Semiconductor |
Trans MOSFET N-CH 30V 6.9A/8.2A 8-Pin SOIC T/R |
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FDS6900AS | Виробник : onsemi |
Description: MOSFET 2N-CH 30V 6.9A/8.2A 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 900mW Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6.9A, 8.2A Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 15V Rds On (Max) @ Id, Vgs: 27mOhm @ 6.9A, 10V Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SOIC |
товар відсутній |
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FDS6900AS | Виробник : onsemi |
Description: MOSFET 2N-CH 30V 6.9A/8.2A 8SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 900mW Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6.9A, 8.2A Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 15V Rds On (Max) @ Id, Vgs: 27mOhm @ 6.9A, 10V Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SOIC |
товар відсутній |
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FDS6900AS | Виробник : onsemi / Fairchild |
MOSFET Dual NCh PowerTrench |
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