FDS8949-F085 ON Semiconductor / Fairchild
на замовлення 2807 шт:
термін постачання 21-30 дні (днів)
Відгуки про товар
Написати відгук
Технічний опис FDS8949-F085 ON Semiconductor / Fairchild
Description: MOSFET 2N-CH 40V 6A 8SOIC, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 2W, Drain to Source Voltage (Vdss): 40V, Current - Continuous Drain (Id) @ 25°C: 6A, Input Capacitance (Ciss) (Max) @ Vds: 955pF @ 20V, Rds On (Max) @ Id, Vgs: 29mOhm @ 6A, 10V, Gate Charge (Qg) (Max) @ Vgs: 11nC @ 5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: 8-SOIC, Part Status: Obsolete.
Інші пропозиції FDS8949-F085
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
 |
FDS8949-F085 | Виробник : ON Semiconductor |
 Trans MOSFET N-CH 40V 6A Automotive 8-Pin SOIC T/R |
товар відсутній |
|
 |
FDS8949-F085 | Виробник : onsemi |
Description: MOSFET 2N-CH 40V 6A 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 6A Input Capacitance (Ciss) (Max) @ Vds: 955pF @ 20V Rds On (Max) @ Id, Vgs: 29mOhm @ 6A, 10V Gate Charge (Qg) (Max) @ Vgs: 11nC @ 5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SOIC Part Status: Obsolete |
товар відсутній |
|
|
|
FDS8949-F085 | Виробник : onsemi |
Description: MOSFET 2N-CH 40V 6A 8SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 6A Input Capacitance (Ciss) (Max) @ Vds: 955pF @ 20V Rds On (Max) @ Id, Vgs: 29mOhm @ 6A, 10V Gate Charge (Qg) (Max) @ Vgs: 11nC @ 5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SOIC Part Status: Obsolete |
товар відсутній |
|
|
|
FDS8949-F085 | Виробник : Fairchild Semiconductor |
Description: POWER FIELD-EFFECT TRANSISTOR, 6 Packaging: Bulk Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 6A Input Capacitance (Ciss) (Max) @ Vds: 955pF @ 20V Rds On (Max) @ Id, Vgs: 29mOhm @ 6A, 10V Gate Charge (Qg) (Max) @ Vgs: 11nC @ 5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SOIC Part Status: Obsolete |
товар відсутній |