FDS9958-F085 ON Semiconductor / Fairchild
на замовлення 1761 шт:
термін постачання 21-30 дні (днів)
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Технічний опис FDS9958-F085 ON Semiconductor / Fairchild
Description: MOSFET 2P-CH 60V 2.9A 8SOIC, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 P-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 900mW, Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 2.9A, Input Capacitance (Ciss) (Max) @ Vds: 1020pF @ 30V, Rds On (Max) @ Id, Vgs: 105mOhm @ 2.9A, 10V, Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: 8-SOIC, Part Status: Obsolete, Grade: Automotive, Qualification: AEC-Q101.
Інші пропозиції FDS9958-F085
| Фото | Назва | Виробник | Інформація |
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Ціна без ПДВ |
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FDS9958-F085 | Виробник : ON Semiconductor |
 Trans MOSFET P-CH 60V 2.9A Automotive 8-Pin SOIC T/R |
товар відсутній |
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FDS9958-F085 | Виробник : onsemi |
Description: MOSFET 2P-CH 60V 2.9A 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 900mW Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 2.9A Input Capacitance (Ciss) (Max) @ Vds: 1020pF @ 30V Rds On (Max) @ Id, Vgs: 105mOhm @ 2.9A, 10V Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SOIC Part Status: Obsolete Grade: Automotive Qualification: AEC-Q101 |
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FDS9958-F085 | Виробник : onsemi |
Description: MOSFET 2P-CH 60V 2.9A 8SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 900mW Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 2.9A Input Capacitance (Ciss) (Max) @ Vds: 1020pF @ 30V Rds On (Max) @ Id, Vgs: 105mOhm @ 2.9A, 10V Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SOIC Grade: Automotive Part Status: Obsolete Qualification: AEC-Q101 |
товар відсутній |