Технічний опис FF900R12IP4DBOSA2 Infineon Technologies
Description: IGBT MOD 1200V 900A 5100W, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Input: Standard, Configuration: 2 Independent, Operating Temperature: -40°C ~ 150°C, Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 900A, NTC Thermistor: Yes, Supplier Device Package: Module, IGBT Type: Trench Field Stop, Part Status: Active, Current - Collector (Ic) (Max): 900 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Power - Max: 5100 W, Current - Collector Cutoff (Max): 5 mA, Input Capacitance (Cies) @ Vce: 54 nF @ 25 V.
Інші пропозиції FF900R12IP4DBOSA2
| Фото | Назва | Виробник | Інформація |
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Ціна без ПДВ |
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FF900R12IP4DBOSA2 | Виробник : Infineon Technologies |
 Trans IGBT Module N-CH 1200V 900A 5100000mW Automotive Tray |
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FF900R12IP4DBOSA2 | Виробник : Infineon Technologies |
Description: IGBT MOD 1200V 900A 5100W Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: 2 Independent Operating Temperature: -40°C ~ 150°C Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 900A NTC Thermistor: Yes Supplier Device Package: Module IGBT Type: Trench Field Stop Part Status: Active Current - Collector (Ic) (Max): 900 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 5100 W Current - Collector Cutoff (Max): 5 mA Input Capacitance (Cies) @ Vce: 54 nF @ 25 V |
товар відсутній |
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| FF900R12IP4DBOSA2 | Виробник : Infineon Technologies |
IGBT Modules PP IHM I XHP 1 7KV |
товар відсутній |