FGAF40N60UFDTU Fairchild Semiconductor
Виробник: Fairchild Semiconductor
Description: INSULATED GATE BIPOLAR TRANSISTO
Packaging: Bulk
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 95 ns
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 20A
Supplier Device Package: TO-3PF
Td (on/off) @ 25°C: 15ns/65ns
Switching Energy: 470µJ (on), 130µJ (off)
Test Condition: 300V, 20A, 10Ohm, 15V
Gate Charge: 77 nC
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 100 W
Description: INSULATED GATE BIPOLAR TRANSISTO
Packaging: Bulk
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 95 ns
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 20A
Supplier Device Package: TO-3PF
Td (on/off) @ 25°C: 15ns/65ns
Switching Energy: 470µJ (on), 130µJ (off)
Test Condition: 300V, 20A, 10Ohm, 15V
Gate Charge: 77 nC
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 100 W
на замовлення 2512 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
122+ | 164.96 грн |
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Технічний опис FGAF40N60UFDTU Fairchild Semiconductor
Description: INSULATED GATE BIPOLAR TRANSISTO, Packaging: Bulk, Package / Case: TO-3P-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 95 ns, Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 20A, Supplier Device Package: TO-3PF, Td (on/off) @ 25°C: 15ns/65ns, Switching Energy: 470µJ (on), 130µJ (off), Test Condition: 300V, 20A, 10Ohm, 15V, Gate Charge: 77 nC, Current - Collector (Ic) (Max): 40 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 160 A, Power - Max: 100 W.
Інші пропозиції FGAF40N60UFDTU
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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FGAF40N60UFDTU | Виробник : ON Semiconductor |
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FGAF40N60UFDTU | Виробник : ONSEMI |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 20A; 40W; TO3PF Mounting: THT Power dissipation: 40W Features of semiconductor devices: integrated anti-parallel diode Case: TO3PF Kind of package: tube Collector-emitter voltage: 600V Gate-emitter voltage: ±20V Collector current: 20A Pulsed collector current: 160A Type of transistor: IGBT Gate charge: 150nC кількість в упаковці: 1 шт |
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FGAF40N60UFDTU | Виробник : onsemi / Fairchild | IGBT Transistors Ultrafast |
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FGAF40N60UFDTU | Виробник : ONSEMI |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 20A; 40W; TO3PF Mounting: THT Power dissipation: 40W Features of semiconductor devices: integrated anti-parallel diode Case: TO3PF Kind of package: tube Collector-emitter voltage: 600V Gate-emitter voltage: ±20V Collector current: 20A Pulsed collector current: 160A Type of transistor: IGBT Gate charge: 150nC |
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