FGH30N6S2D

FGH30N6S2D ON Semiconductor


fgb30n6s2d.pdf Виробник: ON Semiconductor
Trans IGBT Chip N-CH 600V 45A 167000mW 3-Pin(3+Tab) TO-247 Rail
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Технічний опис FGH30N6S2D ON Semiconductor

Description: IGBT 600V 45A 167W TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 46 ns, Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 12A, Supplier Device Package: TO-247-3, Td (on/off) @ 25°C: 6ns/40ns, Switching Energy: 55µJ (on), 100µJ (off), Test Condition: 390V, 12A, 10Ohm, 15V, Gate Charge: 23 nC, Part Status: Obsolete, Current - Collector (Ic) (Max): 45 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 108 A, Power - Max: 167 W.

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FGH30N6S2D FGH30N6S2D Виробник : onsemi FGH30N6S2D.pdf Description: IGBT 600V 45A 167W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 46 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 12A
Supplier Device Package: TO-247-3
Td (on/off) @ 25°C: 6ns/40ns
Switching Energy: 55µJ (on), 100µJ (off)
Test Condition: 390V, 12A, 10Ohm, 15V
Gate Charge: 23 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 45 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 108 A
Power - Max: 167 W
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