Технічний опис FQB7P20TM-F085 onsemi
Category: SMD P channel transistors, Description: Transistor: P-MOSFET; unipolar; -200V; -4.6A; Idm: -29.2A; 90W, Type of transistor: P-MOSFET, Technology: QFET®, Polarisation: unipolar, Drain-source voltage: -200V, Drain current: -4.6A, Pulsed drain current: -29.2A, Power dissipation: 90W, Case: D2PAK, Gate-source voltage: ±30V, On-state resistance: 0.69Ω, Mounting: SMD, Gate charge: 25nC, Kind of package: reel; tape, Kind of channel: enhanced, Application: automotive industry.
Інші пропозиції FQB7P20TM-F085
| Фото | Назва | Виробник | Інформація |
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FQB7P20TM-F085 | Виробник : onsemi |
 Description: MOSFET P-CH 200V 7.3A D2PAK |
товар відсутній |
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FQB7P20TM-F085 | Виробник : ON Semiconductor / Fairchild |
MOSFET 200V P-Channel QFET |
товар відсутній |
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FQB7P20TM-F085 | Виробник : ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -200V; -4.6A; Idm: -29.2A; 90W Type of transistor: P-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: -200V Drain current: -4.6A Pulsed drain current: -29.2A Power dissipation: 90W Case: D2PAK Gate-source voltage: ±30V On-state resistance: 0.69Ω Mounting: SMD Gate charge: 25nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry |
товар відсутній |