на замовлення 44719 шт:
термін постачання 259-268 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
4+ | 98.14 грн |
10+ | 79.08 грн |
100+ | 53.21 грн |
500+ | 45.06 грн |
1000+ | 36.79 грн |
2500+ | 35.85 грн |
Відгуки про товар
Написати відгук
Технічний опис FQD18N20V2TM onsemi / Fairchild
Description: MOSFET N-CH 200V 15A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 15A (Tc), Rds On (Max) @ Id, Vgs: 140mOhm @ 7.5A, 10V, Power Dissipation (Max): 2.5W (Ta), 83W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-252AA, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1080 pF @ 25 V.
Інші пропозиції FQD18N20V2TM
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
---|---|---|---|---|---|
FQD18N20V2TM | Виробник : ON Semiconductor | Trans MOSFET N-CH 200V 15A 3-Pin(2+Tab) DPAK T/R |
товар відсутній |
||
FQD18N20V2TM | Виробник : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 9.75A; 83W; DPAK Type of transistor: N-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: 200V Drain current: 9.75A Power dissipation: 83W Case: DPAK Gate-source voltage: ±30V On-state resistance: 0.14Ω Mounting: SMD Gate charge: 26nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
товар відсутній |
||
FQD18N20V2TM | Виробник : ON Semiconductor | Trans MOSFET N-CH 200V 15A 3-Pin(2+Tab) DPAK T/R |
товар відсутній |
||
FQD18N20V2TM | Виробник : ON Semiconductor | Trans MOSFET N-CH 200V 15A 3-Pin(2+Tab) DPAK T/R |
товар відсутній |
||
FQD18N20V2TM | Виробник : onsemi |
Description: MOSFET N-CH 200V 15A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Rds On (Max) @ Id, Vgs: 140mOhm @ 7.5A, 10V Power Dissipation (Max): 2.5W (Ta), 83W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-252AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1080 pF @ 25 V |
товар відсутній |
||
FQD18N20V2TM | Виробник : onsemi |
Description: MOSFET N-CH 200V 15A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Rds On (Max) @ Id, Vgs: 140mOhm @ 7.5A, 10V Power Dissipation (Max): 2.5W (Ta), 83W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-252AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1080 pF @ 25 V |
товар відсутній |
||
FQD18N20V2TM | Виробник : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 9.75A; 83W; DPAK Type of transistor: N-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: 200V Drain current: 9.75A Power dissipation: 83W Case: DPAK Gate-source voltage: ±30V On-state resistance: 0.14Ω Mounting: SMD Gate charge: 26nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |