FQD3P50TM-F085 onsemi / Fairchild
на замовлення 7495 шт:
термін постачання 21-30 дні (днів)
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Технічний опис FQD3P50TM-F085 onsemi / Fairchild
Description: MOSFET P-CH 500V 2.1A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 2.1A (Tc), Rds On (Max) @ Id, Vgs: 4.9Ohm @ 1.05A, 10V, Power Dissipation (Max): 2.5W (Ta), 50W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-252AA, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 25 V.
Інші пропозиції FQD3P50TM-F085
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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FQD3P50TM-F085 | Виробник : ON Semiconductor |
 Trans MOSFET P-CH 500V 2.1A Automotive AEC-Q101 3-Pin(2+Tab) DPAK T/R |
товар відсутній |
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FQD3P50TM-F085 | Виробник : ON Semiconductor |
Trans MOSFET P-CH 500V 2.1A Automotive 3-Pin(2+Tab) DPAK T/R |
товар відсутній |
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FQD3P50TM-F085 | Виробник : ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -500V; -1.33A; Idm: -8.4A; 50W; DPAK Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -500V Drain current: -1.33A Pulsed drain current: -8.4A Power dissipation: 50W Case: DPAK Gate-source voltage: ±30V On-state resistance: 4.9Ω Mounting: SMD Gate charge: 23nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry кількість в упаковці: 1 шт |
товар відсутній |
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FQD3P50TM-F085 | Виробник : onsemi |
Description: MOSFET P-CH 500V 2.1A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.1A (Tc) Rds On (Max) @ Id, Vgs: 4.9Ohm @ 1.05A, 10V Power Dissipation (Max): 2.5W (Ta), 50W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-252AA Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 25 V |
товар відсутній |
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FQD3P50TM-F085 | Виробник : ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -500V; -1.33A; Idm: -8.4A; 50W; DPAK Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -500V Drain current: -1.33A Pulsed drain current: -8.4A Power dissipation: 50W Case: DPAK Gate-source voltage: ±30V On-state resistance: 4.9Ω Mounting: SMD Gate charge: 23nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry |
товар відсутній |