на замовлення 54268 шт:
термін постачання 259-268 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 67.2 грн |
| 10+ | 57.21 грн |
| 100+ | 34.43 грн |
| 500+ | 28.77 грн |
| 1000+ | 24.51 грн |
| 2500+ | 21.71 грн |
Відгуки про товар
Написати відгук
Технічний опис FQD5P20TM onsemi / Fairchild
Description: MOSFET P-CH 200V 3.7A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 3.7A (Tc), Rds On (Max) @ Id, Vgs: 1.4Ohm @ 1.85A, 10V, Power Dissipation (Max): 2.5W (Ta), 45W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-252AA, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 25 V.
Інші пропозиції FQD5P20TM
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
 |
FQD5P20TM | Виробник : ON Semiconductor |
 Trans MOSFET P-CH 200V 3.7A 3-Pin(2+Tab) DPAK T/R |
товар відсутній |
|
 |
FQD5P20TM | Виробник : ON Semiconductor |
Trans MOSFET P-CH 200V 3.7A 3-Pin(2+Tab) DPAK T/R |
товар відсутній |
|
|
|
FQD5P20TM | Виробник : ON Semiconductor |
Trans MOSFET P-CH 200V 3.7A 3-Pin(2+Tab) DPAK T/R |
товар відсутній |
|
 |
FQD5P20TM | Виробник : ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -200V; -2.34A; 45W; DPAK Type of transistor: P-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: -200V Drain current: -2.34A Power dissipation: 45W Case: DPAK Gate-source voltage: ±30V On-state resistance: 1.4Ω Mounting: SMD Gate charge: 13nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
товар відсутній |
|
 |
FQD5P20TM | Виробник : onsemi |
Description: MOSFET P-CH 200V 3.7A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.7A (Tc) Rds On (Max) @ Id, Vgs: 1.4Ohm @ 1.85A, 10V Power Dissipation (Max): 2.5W (Ta), 45W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-252AA Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 25 V |
товар відсутній |
|
|
|
FQD5P20TM | Виробник : onsemi |
Description: MOSFET P-CH 200V 3.7A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.7A (Tc) Rds On (Max) @ Id, Vgs: 1.4Ohm @ 1.85A, 10V Power Dissipation (Max): 2.5W (Ta), 45W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-252AA Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 25 V |
товар відсутній |
|
|
|
FQD5P20TM | Виробник : ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -200V; -2.34A; 45W; DPAK Type of transistor: P-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: -200V Drain current: -2.34A Power dissipation: 45W Case: DPAK Gate-source voltage: ±30V On-state resistance: 1.4Ω Mounting: SMD Gate charge: 13nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |