Технічний опис FQNL2N50BTA Fairchild
Description: MOSFET N-CH 500V 350MA TO92-3, Packaging: Tape & Box (TB), Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads), Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 350mA (Tc), Rds On (Max) @ Id, Vgs: 5.3Ohm @ 175mA, 10V, Power Dissipation (Max): 1.5W (Tc), Vgs(th) (Max) @ Id: 3.7V @ 250µA, Supplier Device Package: TO-92-3, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 230 pF @ 25 V.
Інші пропозиції FQNL2N50BTA
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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| FQNL2N50BTA | Виробник : FAIRCHILD |
 2003 TO-92L |
на замовлення 5000 шт: термін постачання 14-28 дні (днів) |
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FQNL2N50BTA | Виробник : ON Semiconductor |
Trans MOSFET N-CH 500V 0.35A 3-Pin TO-92L Fan-Fold |
товар відсутній |
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| FQNL2N50BTA | Виробник : ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 220mA; Idm: 1.4A; 1.5W; TO92L Type of transistor: N-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: 500V Drain current: 0.22A Pulsed drain current: 1.4A Power dissipation: 1.5W Case: TO92L Gate-source voltage: ±30V On-state resistance: 5.3Ω Mounting: THT Gate charge: 8nC Kind of package: Ammo Pack Kind of channel: enhanced кількість в упаковці: 1 шт |
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FQNL2N50BTA | Виробник : onsemi |
Description: MOSFET N-CH 500V 350MA TO92-3 Packaging: Tape & Box (TB) Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads) Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 350mA (Tc) Rds On (Max) @ Id, Vgs: 5.3Ohm @ 175mA, 10V Power Dissipation (Max): 1.5W (Tc) Vgs(th) (Max) @ Id: 3.7V @ 250µA Supplier Device Package: TO-92-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 230 pF @ 25 V |
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FQNL2N50BTA | Виробник : onsemi |
Description: MOSFET N-CH 500V 350MA TO92-3 Packaging: Cut Tape (CT) Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads) Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 350mA (Tc) Rds On (Max) @ Id, Vgs: 5.3Ohm @ 175mA, 10V Power Dissipation (Max): 1.5W (Tc) Vgs(th) (Max) @ Id: 3.7V @ 250µA Supplier Device Package: TO-92-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 230 pF @ 25 V |
товар відсутній |
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FQNL2N50BTA | Виробник : onsemi / Fairchild |
MOSFET 500V N-Channel QFET |
товар відсутній |
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| FQNL2N50BTA | Виробник : ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 220mA; Idm: 1.4A; 1.5W; TO92L Type of transistor: N-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: 500V Drain current: 0.22A Pulsed drain current: 1.4A Power dissipation: 1.5W Case: TO92L Gate-source voltage: ±30V On-state resistance: 5.3Ω Mounting: THT Gate charge: 8nC Kind of package: Ammo Pack Kind of channel: enhanced |
товар відсутній |