Технічний опис FQP13N10 ON Semiconductor
Description: MOSFET N-CH 100V 12.8A TO220-3, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 12.8A (Tc), Rds On (Max) @ Id, Vgs: 180mOhm @ 6.4A, 10V, Power Dissipation (Max): 65W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220-3, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 25 V.
Інші пропозиції FQP13N10
| Фото | Назва | Виробник | Інформація |
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Ціна без ПДВ |
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| FQP13N10 | Виробник : ON Semiconductor |
 Trans MOSFET N-CH 100V 12.8A 3-Pin(3+Tab) TO-220 Tube |
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FQP13N10 | Виробник : onsemi |
Description: MOSFET N-CH 100V 12.8A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12.8A (Tc) Rds On (Max) @ Id, Vgs: 180mOhm @ 6.4A, 10V Power Dissipation (Max): 65W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 25 V |
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FQP13N10 | Виробник : onsemi / Fairchild |
MOSFET N-CH/100V/12.8A 0.18OHM |
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FQP13N10 | Виробник : ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 9.05A; 65W; TO220AB Type of transistor: N-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 9.05A Power dissipation: 65W Case: TO220AB Gate-source voltage: ±25V On-state resistance: 0.18Ω Mounting: THT Gate charge: 16nC Kind of package: tube Kind of channel: enhanced |
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