Технічний опис FQPF11N40C FAIRCHILD
Description: MOSFET N-CH 400V 10.5A TO220F, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 10.5A (Tc), Rds On (Max) @ Id, Vgs: 530mOhm @ 5.25A, 10V, Power Dissipation (Max): 44W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220F-3, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 400 V, Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1090 pF @ 25 V.
Інші пропозиції FQPF11N40C
| Фото | Назва | Виробник | Інформація |
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Ціна без ПДВ |
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FQPF11N40C | Виробник : ON Semiconductor |
 Trans MOSFET N-CH 400V 10.5A 3-Pin(3+Tab) TO-220FP Tube |
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FQPF11N40C | Виробник : ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 400V; 6.6A; Idm: 42A; 44W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 400V Drain current: 6.6A Pulsed drain current: 42A Power dissipation: 44W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 530mΩ Mounting: THT Gate charge: 35nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
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FQPF11N40C | Виробник : onsemi |
Description: MOSFET N-CH 400V 10.5A TO220F Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10.5A (Tc) Rds On (Max) @ Id, Vgs: 530mOhm @ 5.25A, 10V Power Dissipation (Max): 44W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220F-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 400 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1090 pF @ 25 V |
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FQPF11N40C | Виробник : onsemi / Fairchild |
MOSFET 400V N-Channel Advance Q-FET |
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FQPF11N40C | Виробник : ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 400V; 6.6A; Idm: 42A; 44W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 400V Drain current: 6.6A Pulsed drain current: 42A Power dissipation: 44W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 530mΩ Mounting: THT Gate charge: 35nC Kind of package: tube Kind of channel: enhanced |
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