Технічний опис FQPF17N40T onsemi / Fairchild
Description: MOSFET N-CH 400V 9.5A TO220F, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 9.5A (Tc), Rds On (Max) @ Id, Vgs: 270mOhm @ 4.75A, 10V, Power Dissipation (Max): 56W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-220F-3, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 400 V, Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 25 V.
Інші пропозиції FQPF17N40T
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
 |
FQPF17N40T | Виробник : ON Semiconductor |
 Trans MOSFET N-CH 400V 9.5A 3-Pin(3+Tab) TO-220FP Tube |
товар відсутній |
|
 |
FQPF17N40T | Виробник : ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 400V; 6A; Idm: 38A; 56W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 400V Drain current: 6A Pulsed drain current: 38A Power dissipation: 56W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.27Ω Mounting: THT Gate charge: 60nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
товар відсутній |
|
 |
FQPF17N40T | Виробник : onsemi |
Description: MOSFET N-CH 400V 9.5A TO220F Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9.5A (Tc) Rds On (Max) @ Id, Vgs: 270mOhm @ 4.75A, 10V Power Dissipation (Max): 56W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220F-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 400 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 25 V |
товар відсутній |
|
|
|
FQPF17N40T | Виробник : ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 400V; 6A; Idm: 38A; 56W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 400V Drain current: 6A Pulsed drain current: 38A Power dissipation: 56W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.27Ω Mounting: THT Gate charge: 60nC Kind of package: tube Kind of channel: enhanced |
товар відсутній |