FQPF5N90 Fairchild Semiconductor
Виробник: Fairchild Semiconductor
Description: POWER FIELD-EFFECT TRANSISTOR, 3
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 2.3Ohm @ 1.5A, 10V
Power Dissipation (Max): 51W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1550 pF @ 25 V
Description: POWER FIELD-EFFECT TRANSISTOR, 3
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 2.3Ohm @ 1.5A, 10V
Power Dissipation (Max): 51W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1550 pF @ 25 V
на замовлення 450 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
205+ | 98.03 грн |
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Технічний опис FQPF5N90 Fairchild Semiconductor
Description: MOSFET N-CH 900V 3A TO220F, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 3A (Tc), Rds On (Max) @ Id, Vgs: 2.3Ohm @ 1.5A, 10V, Power Dissipation (Max): 51W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-220F-3, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 900 V, Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1550 pF @ 25 V.
Інші пропозиції FQPF5N90 за ціною від 143.54 грн до 230.55 грн
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||||||
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FQPF5N90 | Виробник : onsemi / Fairchild | MOSFET 900V N-Channel QFET |
на замовлення 460 шт: термін постачання 21-30 дні (днів) |
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FQPF5N90 | Виробник : FSC | TO220F |
на замовлення 86200 шт: термін постачання 14-28 дні (днів) |
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FQPF5N90 | Виробник : ON Semiconductor | Trans MOSFET N-CH 900V 3A 3-Pin(3+Tab) TO-220FP Tube |
товар відсутній |
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FQPF5N90 | Виробник : ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 900V; 1.9A; Idm: 12A; 51W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 900V Drain current: 1.9A Pulsed drain current: 12A Power dissipation: 51W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 2.3Ω Mounting: THT Gate charge: 40nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
товар відсутній |
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FQPF5N90 | Виробник : onsemi |
Description: MOSFET N-CH 900V 3A TO220F Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Tc) Rds On (Max) @ Id, Vgs: 2.3Ohm @ 1.5A, 10V Power Dissipation (Max): 51W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220F-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 900 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1550 pF @ 25 V |
товар відсутній |
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FQPF5N90 | Виробник : ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 900V; 1.9A; Idm: 12A; 51W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 900V Drain current: 1.9A Pulsed drain current: 12A Power dissipation: 51W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 2.3Ω Mounting: THT Gate charge: 40nC Kind of package: tube Kind of channel: enhanced |
товар відсутній |