на замовлення 697 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 181.48 грн |
| 10+ | 161.23 грн |
| 25+ | 132.19 грн |
| 100+ | 112.83 грн |
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Технічний опис FQPF6N80CT onsemi / Fairchild
Description: MOSFET N-CH 800V 5.5A TO220F, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc), Rds On (Max) @ Id, Vgs: 2.5Ohm @ 2.75A, 10V, Power Dissipation (Max): 51W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-220F-3, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 800 V, Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1310 pF @ 25 V.
Інші пропозиції FQPF6N80CT
| Фото | Назва | Виробник | Інформація |
Доступність |
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FQPF6N80CT | Виробник : ON Semiconductor |
 Trans MOSFET N-CH 800V 5.5A 3-Pin(3+Tab) TO-220FP Tube |
товар відсутній |
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FQPF6N80CT | Виробник : ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 3.2A; Idm: 22A; 51W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 3.2A Pulsed drain current: 22A Power dissipation: 51W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 2.5Ω Mounting: THT Gate charge: 30nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
товар відсутній |
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FQPF6N80CT | Виробник : onsemi |
Description: MOSFET N-CH 800V 5.5A TO220F Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc) Rds On (Max) @ Id, Vgs: 2.5Ohm @ 2.75A, 10V Power Dissipation (Max): 51W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220F-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1310 pF @ 25 V |
товар відсутній |
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FQPF6N80CT | Виробник : onsemi |
Description: MOSFET N-CH 800V 5.5A TO220F Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc) Rds On (Max) @ Id, Vgs: 2.5Ohm @ 2.75A, 10V Power Dissipation (Max): 51W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220F-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1310 pF @ 25 V |
товар відсутній |
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FQPF6N80CT | Виробник : ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 3.2A; Idm: 22A; 51W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 3.2A Pulsed drain current: 22A Power dissipation: 51W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 2.5Ω Mounting: THT Gate charge: 30nC Kind of package: tube Kind of channel: enhanced |
товар відсутній |