G1NP02LLE Goford Semiconductor
Виробник: Goford SemiconductorDescription: MOSFET 20V 1.3A/1.1A SOT23-6L
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.25W (Tc)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.3A (Tc), 1.1A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 146pF @ 10V, 177pF @ 10V
Rds On (Max) @ Id, Vgs: 210mOhm @ 650mA, 4.5V, 460mOhm @ 500mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1nC @ 4.5V, 1.22nC @ 4.5V
FET Feature: Standard
Vgs(th) (Max) @ Id: 1V @ 250µA, 800mV @ 250µA
Supplier Device Package: SOT-23-6L
Part Status: Active
на замовлення 150000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 3.04 грн |
| 15000+ | 2.67 грн |
| 30000+ | 2.42 грн |
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Технічний опис G1NP02LLE Goford Semiconductor
Description: MOSFET 20V 1.3A/1.1A SOT23-6L, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.25W (Tc), Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 1.3A (Tc), 1.1A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 146pF @ 10V, 177pF @ 10V, Rds On (Max) @ Id, Vgs: 210mOhm @ 650mA, 4.5V, 460mOhm @ 500mA, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 1nC @ 4.5V, 1.22nC @ 4.5V, FET Feature: Standard, Vgs(th) (Max) @ Id: 1V @ 250µA, 800mV @ 250µA, Supplier Device Package: SOT-23-6L, Part Status: Active.
Інші пропозиції G1NP02LLE за ціною від 4.39 грн до 24.55 грн
| Фото | Назва | Виробник | Інформація |
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G1NP02LLE | Виробник : Goford Semiconductor |
Description: MOSFET 20V 1.3A/1.1A SOT23-6L Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.25W (Tc) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1.3A (Tc), 1.1A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 146pF @ 10V, 177pF @ 10V Rds On (Max) @ Id, Vgs: 210mOhm @ 650mA, 4.5V, 460mOhm @ 500mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 1nC @ 4.5V, 1.22nC @ 4.5V FET Feature: Standard Vgs(th) (Max) @ Id: 1V @ 250µA, 800mV @ 250µA Supplier Device Package: SOT-23-6L Part Status: Active |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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G1NP02LLE | Виробник : Goford Semiconductor |
Description: MOSFET 20V 1.3A/1.1A SOT23-6L Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.25W (Tc) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1.3A (Tc), 1.1A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 146pF @ 10V, 177pF @ 10V Rds On (Max) @ Id, Vgs: 210mOhm @ 650mA, 4.5V, 460mOhm @ 500mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 1nC @ 4.5V, 1.22nC @ 4.5V FET Feature: Standard Vgs(th) (Max) @ Id: 1V @ 250µA, 800mV @ 250µA Supplier Device Package: SOT-23-6L Part Status: Active |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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