G4S12040BM Global Power Technology-GPT
Виробник: Global Power Technology-GPTDescription: SIC SCHOTTKY DIODE 1200V 40A 3-P
Packaging: Cut Tape (CT)
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 64.5A (DC)
Supplier Device Package: TO-247AB
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 20 A
Current - Reverse Leakage @ Vr: 30 µA @ 1200 V
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Технічний опис G4S12040BM Global Power Technology-GPT
Description: SIC SCHOTTKY DIODE 1200V 40A 3-P, Packaging: Tape & Box (TB), Package / Case: TO-247-3, Mounting Type: Through Hole, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Diode Configuration: 1 Pair Common Cathode, Current - Average Rectified (Io) (per Diode): 64.5A (DC), Supplier Device Package: TO-247AB, Operating Temperature - Junction: -55°C ~ 175°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 1200 V, Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 20 A, Current - Reverse Leakage @ Vr: 30 µA @ 1200 V.
Інші пропозиції G4S12040BM
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G4S12040BM | Виробник : Global Power Technology-GPT |
Description: SIC SCHOTTKY DIODE 1200V 40A 3-P Packaging: Tape & Box (TB) Package / Case: TO-247-3 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 64.5A (DC) Supplier Device Package: TO-247AB Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 20 A Current - Reverse Leakage @ Vr: 30 µA @ 1200 V |
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