GD15PJY120F5S STARPOWER SEMICONDUCTOR
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1200V; F5.1
Type of module: IGBT
Semiconductor structure: diode/transistor
Case: F5.1
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
Electrical mounting: Press-in PCB
Technology: Advanced Trench FS IGBT
Mechanical mounting: screw
Collector current: 15A
Pulsed collector current: 30A
Max. off-state voltage: 1.2kV
Gate-emitter voltage: ±20V
кількість в упаковці: 25 шт
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1200V; F5.1
Type of module: IGBT
Semiconductor structure: diode/transistor
Case: F5.1
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
Electrical mounting: Press-in PCB
Technology: Advanced Trench FS IGBT
Mechanical mounting: screw
Collector current: 15A
Pulsed collector current: 30A
Max. off-state voltage: 1.2kV
Gate-emitter voltage: ±20V
кількість в упаковці: 25 шт
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Технічний опис GD15PJY120F5S STARPOWER SEMICONDUCTOR
Category: IGBT modules, Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1200V; F5.1, Type of module: IGBT, Semiconductor structure: diode/transistor, Case: F5.1, Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge, Electrical mounting: Press-in PCB, Technology: Advanced Trench FS IGBT, Mechanical mounting: screw, Collector current: 15A, Pulsed collector current: 30A, Max. off-state voltage: 1.2kV, Gate-emitter voltage: ±20V, кількість в упаковці: 25 шт.
Інші пропозиції GD15PJY120F5S
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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GD15PJY120F5S | Виробник : STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1200V; F5.1 Type of module: IGBT Semiconductor structure: diode/transistor Case: F5.1 Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge Electrical mounting: Press-in PCB Technology: Advanced Trench FS IGBT Mechanical mounting: screw Collector current: 15A Pulsed collector current: 30A Max. off-state voltage: 1.2kV Gate-emitter voltage: ±20V |
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