GD75FFY120C6S STARPOWER SEMICONDUCTOR


Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Pulsed collector current: 150A
Collector current: 75A
Gate-emitter voltage: ±20V
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Type of module: IGBT
Case: C6 62mm
Technology: Advanced Trench FS IGBT
Topology: IGBT three-phase bridge; NTC thermistor
кількість в упаковці: 10 шт
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Технічний опис GD75FFY120C6S STARPOWER SEMICONDUCTOR

Category: IGBT modules, Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge, Pulsed collector current: 150A, Collector current: 75A, Gate-emitter voltage: ±20V, Electrical mounting: Press-in PCB, Mechanical mounting: screw, Semiconductor structure: transistor/transistor, Max. off-state voltage: 1.2kV, Type of module: IGBT, Case: C6 62mm, Technology: Advanced Trench FS IGBT, Topology: IGBT three-phase bridge; NTC thermistor, кількість в упаковці: 10 шт.

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GD75FFY120C6S Виробник : STARPOWER SEMICONDUCTOR Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Pulsed collector current: 150A
Collector current: 75A
Gate-emitter voltage: ±20V
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Type of module: IGBT
Case: C6 62mm
Technology: Advanced Trench FS IGBT
Topology: IGBT three-phase bridge; NTC thermistor
товар відсутній