HER304G Taiwan Semiconductor Corporation
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 300V 3A DO201AD
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 300 V
Description: DIODE GEN PURP 300V 3A DO201AD
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 300 V
на замовлення 1250 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
1250+ | 14.18 грн |
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Технічний опис HER304G Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 300V 3A DO201AD, Packaging: Tape & Reel (TR), Package / Case: DO-201AD, Axial, Mounting Type: Through Hole, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 50 ns, Technology: Standard, Capacitance @ Vr, F: 60pF @ 4V, 1MHz, Current - Average Rectified (Io): 3A, Supplier Device Package: DO-201AD, Operating Temperature - Junction: -55°C ~ 150°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 300 V, Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A, Current - Reverse Leakage @ Vr: 10 µA @ 300 V.
Інші пропозиції HER304G за ціною від 6.12 грн до 37.55 грн
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||||||||
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HER304G | Виробник : YANGJIE TECHNOLOGY |
Category: THT universal diodes Description: Diode: rectifying; THT; 300V; 3A; tape; Ifsm: 125A; DO201AD; 50ns Semiconductor structure: single diode Max. off-state voltage: 300V Max. forward impulse current: 125A Case: DO201AD Mounting: THT Features of semiconductor devices: glass passivated; superfast switching Kind of package: tape Load current: 3A Type of diode: rectifying Reverse recovery time: 50ns Max. forward voltage: 1.3V |
на замовлення 1205 шт: термін постачання 21-30 дні (днів) |
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HER304G | Виробник : YANGJIE TECHNOLOGY |
Category: THT universal diodes Description: Diode: rectifying; THT; 300V; 3A; tape; Ifsm: 125A; DO201AD; 50ns Semiconductor structure: single diode Max. off-state voltage: 300V Max. forward impulse current: 125A Case: DO201AD Mounting: THT Features of semiconductor devices: glass passivated; superfast switching Kind of package: tape Load current: 3A Type of diode: rectifying Reverse recovery time: 50ns Max. forward voltage: 1.3V кількість в упаковці: 5 шт |
на замовлення 1205 шт: термін постачання 7-14 дні (днів) |
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HER304G | Виробник : Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 300V 3A DO201AD Packaging: Cut Tape (CT) Package / Case: DO-201AD, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 60pF @ 4V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 300 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A Current - Reverse Leakage @ Vr: 10 µA @ 300 V |
на замовлення 2490 шт: термін постачання 21-31 дні (днів) |
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HER304G | Виробник : Yangjie Electronic Technology | High Efficient Rectifier |
на замовлення 25000 шт: термін постачання 21-31 дні (днів) |
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HER304G | Виробник : Taiwan Semiconductor | Rectifiers 50ns, 3A, 300V, High Efficient Recovery Rectifier |
товар відсутній |