Технічний опис HER601G R0G Taiwan Semiconductor
Description: DIODE GEN PURP 50V 6A R-6, Packaging: Tape & Reel (TR), Package / Case: R-6, Axial, Mounting Type: Through Hole, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 50 ns, Technology: Standard, Capacitance @ Vr, F: 80pF @ 4V, 1MHz, Current - Average Rectified (Io): 6A, Supplier Device Package: R-6, Operating Temperature - Junction: -55°C ~ 150°C, Voltage - DC Reverse (Vr) (Max): 50 V, Voltage - Forward (Vf) (Max) @ If: 1 V @ 6 A, Current - Reverse Leakage @ Vr: 10 µA @ 50 V.
Інші пропозиції HER601G R0G
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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HER601G R0G | Виробник : Taiwan Semiconductor | Rectifier Diode Switching 50V 6A 50ns 2-Pin Case R-6 |
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HER601G R0G | Виробник : Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 50V 6A R-6 Packaging: Tape & Reel (TR) Package / Case: R-6, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 80pF @ 4V, 1MHz Current - Average Rectified (Io): 6A Supplier Device Package: R-6 Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 6 A Current - Reverse Leakage @ Vr: 10 µA @ 50 V |
товар відсутній |
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HER601G R0G | Виробник : Taiwan Semiconductor | Rectifiers 50ns, 6A, 50V, High Efficient Recovery Rectifier |
товар відсутній |