HGT1S7N60A4DS9A

HGT1S7N60A4DS9A Fairchild Semiconductor


FAIR-S-A0000083814-1.pdf?t.download=true&u=5oefqw Виробник: Fairchild Semiconductor
Description: IGBT, 34A, 600V, N-CHANNEL
Packaging: Bulk
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 34 ns
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 7A
Supplier Device Package: TO-263AB
Td (on/off) @ 25°C: 11ns/100ns
Switching Energy: 120µJ (on), 60µJ (off)
Test Condition: 390V, 7A, 25Ohm, 15V
Gate Charge: 60 nC
Part Status: Active
Current - Collector (Ic) (Max): 34 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 56 A
Power - Max: 125 W
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Технічний опис HGT1S7N60A4DS9A Fairchild Semiconductor

Description: IGBT, 34A, 600V, N-CHANNEL, Packaging: Bulk, Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 34 ns, Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 7A, Supplier Device Package: TO-263AB, Td (on/off) @ 25°C: 11ns/100ns, Switching Energy: 120µJ (on), 60µJ (off), Test Condition: 390V, 7A, 25Ohm, 15V, Gate Charge: 60 nC, Part Status: Active, Current - Collector (Ic) (Max): 34 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 56 A, Power - Max: 125 W.

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HGT1S7N60A4DS9A Виробник : onsemi / Fairchild FAIR-S-A0000083814-1.pdf?t.download=true&u=5oefqw IGBT Transistors
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