HGT1S7N60B3DS

HGT1S7N60B3DS Harris Corporation


HRISSA44-1.pdf?t.download=true&u=5oefqw Виробник: Harris Corporation
Description: 14 A, 600 V, UFS N-CHANNEL IGBT
Packaging: Bulk
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 37 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 7A
Supplier Device Package: TO-263AB
Td (on/off) @ 25°C: 26ns/130ns
Switching Energy: 160µJ (on), 120µJ (off)
Test Condition: 480V, 7A, 50Ohm, 15V
Gate Charge: 30 nC
Part Status: Active
Current - Collector (Ic) (Max): 14 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 56 A
Power - Max: 60 W
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Технічний опис HGT1S7N60B3DS Harris Corporation

Description: 14 A, 600 V, UFS N-CHANNEL IGBT, Packaging: Bulk, Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 37 ns, Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 7A, Supplier Device Package: TO-263AB, Td (on/off) @ 25°C: 26ns/130ns, Switching Energy: 160µJ (on), 120µJ (off), Test Condition: 480V, 7A, 50Ohm, 15V, Gate Charge: 30 nC, Part Status: Active, Current - Collector (Ic) (Max): 14 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 56 A, Power - Max: 60 W.

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HGT1S7N60B3DS Виробник : onsemi / Fairchild HRISSA44-1.pdf?t.download=true&u=5oefqw IGBT Transistors
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