HGTG11N120CN Fairchild Semiconductor
Виробник: Fairchild Semiconductor
Description: N-CHANNEL IGBT
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 11A
Supplier Device Package: TO-247
IGBT Type: NPT
Td (on/off) @ 25°C: 23ns/180ns
Switching Energy: 400µJ (on), 1.3mJ (off)
Test Condition: 960V, 11A, 10Ohm, 15V
Gate Charge: 100 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 43 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 298 W
Description: N-CHANNEL IGBT
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 11A
Supplier Device Package: TO-247
IGBT Type: NPT
Td (on/off) @ 25°C: 23ns/180ns
Switching Energy: 400µJ (on), 1.3mJ (off)
Test Condition: 960V, 11A, 10Ohm, 15V
Gate Charge: 100 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 43 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 298 W
на замовлення 971 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
137+ | 145.97 грн |
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Технічний опис HGTG11N120CN Fairchild Semiconductor
Description: N-CHANNEL IGBT, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 11A, Supplier Device Package: TO-247, IGBT Type: NPT, Td (on/off) @ 25°C: 23ns/180ns, Switching Energy: 400µJ (on), 1.3mJ (off), Test Condition: 960V, 11A, 10Ohm, 15V, Gate Charge: 100 nC, Part Status: Obsolete, Current - Collector (Ic) (Max): 43 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 80 A, Power - Max: 298 W.
Інші пропозиції HGTG11N120CN за ціною від 166.92 грн до 166.92 грн
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||
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HGTG11N120CN | Виробник : ONSEMI |
Description: ONSEMI - HGTG11N120CN - BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT tariffCode: 85412900 productTraceability: No rohsCompliant: Y-EX euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) |
на замовлення 971 шт: термін постачання 21-31 дні (днів) |
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HGTG11N120CN | Виробник : ON Semiconductor | Trans IGBT Chip N-CH 1200V 43A 298000mW 3-Pin(3+Tab) TO-247 Rail |
товар відсутній |
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HGTG11N120CN | Виробник : onsemi |
Description: IGBT 1200V 43A 298W TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 11A Supplier Device Package: TO-247-3 IGBT Type: NPT Td (on/off) @ 25°C: 23ns/180ns Switching Energy: 400µJ (on), 1.3mJ (off) Test Condition: 960V, 11A, 10Ohm, 15V Gate Charge: 100 nC Current - Collector (Ic) (Max): 43 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 80 A Power - Max: 298 W |
товар відсутній |
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HGTG11N120CN | Виробник : onsemi / Fairchild | IGBT Transistors 43A 1200V N-Ch |
товар відсутній |