Продукція > ONSEMI / FAIRCHILD > HUF75329D3ST
HUF75329D3ST

HUF75329D3ST onsemi / Fairchild

HUF75329D3S_D-2314435.pdf Виробник: onsemi / Fairchild
MOSFET 20a 55V N-Channel UltraFET
на замовлення 2208 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
5+63.55 грн
10+ 54.76 грн
100+ 41.62 грн
500+ 35.96 грн
1000+ 29.3 грн
2500+ 27.57 грн
5000+ 26.24 грн
Мінімальне замовлення: 5
Відгуки про товар
Написати відгук

Технічний опис HUF75329D3ST onsemi / Fairchild

Description: MOSFET N-CH 55V 20A TO252AA, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 20A (Tc), Rds On (Max) @ Id, Vgs: 26mOhm @ 20A, 10V, Power Dissipation (Max): 128W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-252AA, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 55 V, Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 20 V, Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 25 V.

Інші пропозиції HUF75329D3ST

Фото Назва Виробник Інформація Доступність
Ціна без ПДВ
HUF75329D3ST HUF75329D3ST Виробник : ON Semiconductor 1069169054897907huf75329d3s.pdf Trans MOSFET N-CH Si 55V 20A 3-Pin(2+Tab) DPAK T/R
товар відсутній
HUF75329D3ST HUF75329D3ST Виробник : ON Semiconductor huf75329d3s-d.pdf Trans MOSFET N-CH Si 55V 20A 3-Pin(2+Tab) DPAK T/R
товар відсутній
HUF75329D3ST HUF75329D3ST Виробник : onsemi huf75329d3s-d.pdf Description: MOSFET N-CH 55V 20A TO252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 20A, 10V
Power Dissipation (Max): 128W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 25 V
товар відсутній
HUF75329D3ST HUF75329D3ST Виробник : onsemi huf75329d3s-d.pdf Description: MOSFET N-CH 55V 20A TO252AA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 20A, 10V
Power Dissipation (Max): 128W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 25 V
товар відсутній
HUF75329D3ST Виробник : Fairchild Semiconductor FAIRS45728-1.pdf?t.download=true&u=5oefqw Description: POWER FIELD-EFFECT TRANSISTOR, 2
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 20A, 10V
Power Dissipation (Max): 128W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252, (D-Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 25 V
товар відсутній