Технічний опис HUF76407DK8T FAIRCHILD
Description: MOSFET 2N-CH 60V 8SOIC, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 2.5W, Drain to Source Voltage (Vdss): 60V, Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 25V, Rds On (Max) @ Id, Vgs: 90mOhm @ 3.8A, 10V, Gate Charge (Qg) (Max) @ Vgs: 11.2nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: 8-SOIC.
Інші пропозиції HUF76407DK8T
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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HUF76407DK8T | Виробник : ON Semiconductor |
 Trans MOSFET N-CH 60V 3.8A 8-Pin SOIC N T/R |
товар відсутній |
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HUF76407DK8T | Виробник : onsemi |
Description: MOSFET 2N-CH 60V 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.5W Drain to Source Voltage (Vdss): 60V Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 25V Rds On (Max) @ Id, Vgs: 90mOhm @ 3.8A, 10V Gate Charge (Qg) (Max) @ Vgs: 11.2nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SOIC |
товар відсутній |