IAUA180N08S5N026AUMA1 Infineon Technologies
Виробник: Infineon TechnologiesDescription: MOSFET_(75V 120V( PG-HSOF-5
Packaging: Cut Tape (CT)
Package / Case: 5-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tj)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 90A, 10V
Power Dissipation (Max): 179W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 100µA
Supplier Device Package: PG-HSOF-5-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5980 pF @ 40 V
на замовлення 1570 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 191.13 грн |
| 10+ | 154.58 грн |
| 100+ | 125.05 грн |
| 500+ | 104.31 грн |
| 1000+ | 89.32 грн |
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Технічний опис IAUA180N08S5N026AUMA1 Infineon Technologies
Description: MOSFET_(75V 120V( PG-HSOF-5, Packaging: Tape & Reel (TR), Package / Case: 5-PowerSFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 180A (Tj), Rds On (Max) @ Id, Vgs: 2.6mOhm @ 90A, 10V, Power Dissipation (Max): 179W (Tc), Vgs(th) (Max) @ Id: 3.8V @ 100µA, Supplier Device Package: PG-HSOF-5-4, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5980 pF @ 40 V.
Інші пропозиції IAUA180N08S5N026AUMA1 за ціною від 91.67 грн до 206.92 грн
| Фото | Назва | Виробник | Інформація |
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IAUA180N08S5N026AUMA1 | Виробник : Infineon Technologies |
MOSFET MOSFET_(75V 120V( |
на замовлення 3501 шт: термін постачання 21-30 дні (днів) |
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| IAUA180N08S5N026AUMA1 | Виробник : Infineon Technologies |
SP005423387 |
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| IAUA180N08S5N026AUMA1 | Виробник : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 25A; Idm: 546A; 179W; PG-HSOF-5 Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 80V Drain current: 25A Pulsed drain current: 546A Power dissipation: 179W Case: PG-HSOF-5 Gate-source voltage: ±20V On-state resistance: 3.6mΩ Mounting: SMD Gate charge: 87nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 2000 шт |
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IAUA180N08S5N026AUMA1 | Виробник : Infineon Technologies |
Description: MOSFET_(75V 120V( PG-HSOF-5 Packaging: Tape & Reel (TR) Package / Case: 5-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 180A (Tj) Rds On (Max) @ Id, Vgs: 2.6mOhm @ 90A, 10V Power Dissipation (Max): 179W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 100µA Supplier Device Package: PG-HSOF-5-4 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5980 pF @ 40 V |
товар відсутній |
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| IAUA180N08S5N026AUMA1 | Виробник : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 25A; Idm: 546A; 179W; PG-HSOF-5 Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 80V Drain current: 25A Pulsed drain current: 546A Power dissipation: 179W Case: PG-HSOF-5 Gate-source voltage: ±20V On-state resistance: 3.6mΩ Mounting: SMD Gate charge: 87nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |