IAUC100N08S5N043ATMA1 Infineon Technologies
Виробник: Infineon Technologies
Description: MOSFET N-CH 80V 100A 8TDSON-34
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 50A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 63µA
Supplier Device Package: PG-TDSON-8-34
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3860 pF @ 40 V
Qualification: AEC-Q101
Description: MOSFET N-CH 80V 100A 8TDSON-34
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 50A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 63µA
Supplier Device Package: PG-TDSON-8-34
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3860 pF @ 40 V
Qualification: AEC-Q101
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
5000+ | 58.06 грн |
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Технічний опис IAUC100N08S5N043ATMA1 Infineon Technologies
Description: INFINEON - IAUC100N08S5N043ATMA1 - Leistungs-MOSFET, n-Kanal, 80 V, 100 A, 0.0036 ohm, PG-TDSON, Oberflächenmontage, tariffCode: 85412900, Transistormontage: Oberflächenmontage, Drain-Source-Spannung Vds: 80, rohsCompliant: YES, Dauer-Drainstrom Id: 100, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: AEC-Q101, usEccn: EAR99, Verlustleistung Pd: 125, Gate-Source-Schwellenspannung, max.: 3, euEccn: NLR, Verlustleistung: 125, Bauform - Transistor: PG-TDSON, Qualifizierungsstandard der Automobilindustrie: AEC-Q101, Anzahl der Pins: 8, Produktpalette: OptiMOS-5, productTraceability: Yes-Date/Lot Code, Wandlerpolarität: n-Kanal, Kanaltyp: n-Kanal, Betriebswiderstand, Rds(on): 0.0036, Rds(on)-Prüfspannung: 10, Betriebstemperatur, max.: 175, Drain-Source-Durchgangswiderstand: 0.0036, SVHC: No SVHC (17-Jan-2023).
Інші пропозиції IAUC100N08S5N043ATMA1 за ціною від 54.33 грн до 205.89 грн
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||||||||||||
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IAUC100N08S5N043ATMA1 | Виробник : INFINEON |
Description: INFINEON - IAUC100N08S5N043ATMA1 - Leistungs-MOSFET, n-Kanal, 80 V, 100 A, 0.0036 ohm, PG-TDSON, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 80 rohsCompliant: YES Dauer-Drainstrom Id: 100 hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 usEccn: EAR99 Verlustleistung Pd: 125 Gate-Source-Schwellenspannung, max.: 3 euEccn: NLR Verlustleistung: 125 Bauform - Transistor: PG-TDSON Qualifizierungsstandard der Automobilindustrie: AEC-Q101 Anzahl der Pins: 8 Produktpalette: OptiMOS-5 productTraceability: Yes-Date/Lot Code Wandlerpolarität: n-Kanal Kanaltyp: n-Kanal Betriebswiderstand, Rds(on): 0.0036 Rds(on)-Prüfspannung: 10 Betriebstemperatur, max.: 175 Drain-Source-Durchgangswiderstand: 0.0036 SVHC: No SVHC (17-Jan-2023) |
на замовлення 6409 шт: термін постачання 21-31 дні (днів) |
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IAUC100N08S5N043ATMA1 | Виробник : Infineon Technologies |
Description: MOSFET N-CH 80V 100A 8TDSON-34 Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 4mOhm @ 50A, 10V Power Dissipation (Max): 125W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 63µA Supplier Device Package: PG-TDSON-8-34 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3860 pF @ 40 V Qualification: AEC-Q101 |
на замовлення 9700 шт: термін постачання 21-31 дні (днів) |
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IAUC100N08S5N043ATMA1 | Виробник : Infineon Technologies | MOSFET MOSFET_(75V 120V( |
на замовлення 3830 шт: термін постачання 21-30 дні (днів) |
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IAUC100N08S5N043ATMA1 | Виробник : INFINEON |
Description: INFINEON - IAUC100N08S5N043ATMA1 - Leistungs-MOSFET, n-Kanal, 80 V, 100 A, 0.0036 ohm, PG-TDSON, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 80 rohsCompliant: YES Dauer-Drainstrom Id: 100 hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 usEccn: EAR99 Verlustleistung Pd: 125 Gate-Source-Schwellenspannung, max.: 3 euEccn: NLR Verlustleistung: 125 Bauform - Transistor: PG-TDSON Qualifizierungsstandard der Automobilindustrie: AEC-Q101 Anzahl der Pins: 8 Produktpalette: OptiMOS-5 productTraceability: Yes-Date/Lot Code Wandlerpolarität: n-Kanal Kanaltyp: n-Kanal Betriebswiderstand, Rds(on): 0.0036 Rds(on)-Prüfspannung: 10 Betriebstemperatur, max.: 175 Drain-Source-Durchgangswiderstand: 0.0036 SVHC: No SVHC (17-Jan-2023) |
на замовлення 6409 шт: термін постачання 21-31 дні (днів) |
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IAUC100N08S5N043ATMA1 | Виробник : Infineon Technologies | N Channel Power MOSFET |
товар відсутній |
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IAUC100N08S5N043ATMA1 | Виробник : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 76A; Idm: 400A; 120W Case: PG-TDSON-8 Mounting: SMD Kind of package: reel; tape Technology: OptiMOS™ 5 Pulsed drain current: 400A Drain-source voltage: 80V Drain current: 76A On-state resistance: 4.3mΩ Type of transistor: N-MOSFET Power dissipation: 120W Polarisation: unipolar Kind of channel: enhanced Gate-source voltage: ±20V кількість в упаковці: 5000 шт |
товар відсутній |
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IAUC100N08S5N043ATMA1 | Виробник : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 76A; Idm: 400A; 120W Case: PG-TDSON-8 Mounting: SMD Kind of package: reel; tape Technology: OptiMOS™ 5 Pulsed drain current: 400A Drain-source voltage: 80V Drain current: 76A On-state resistance: 4.3mΩ Type of transistor: N-MOSFET Power dissipation: 120W Polarisation: unipolar Kind of channel: enhanced Gate-source voltage: ±20V |
товар відсутній |