IAUC60N04S6N050HATMA1 Infineon Technologies
Виробник: Infineon TechnologiesDescription: MOSFET 2N-CH 40V 60A 8TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 52W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 60A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 1027pF @ 25V
Rds On (Max) @ Id, Vgs: 5mOhm @ 30A, 10V
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 13µA
Supplier Device Package: PG-TDSON-8-57
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
на замовлення 4993 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 108.5 грн |
| 10+ | 87.05 грн |
| 100+ | 69.26 грн |
| 500+ | 55 грн |
| 1000+ | 46.67 грн |
| 2000+ | 44.34 грн |
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Технічний опис IAUC60N04S6N050HATMA1 Infineon Technologies
Description: MOSFET 2N-CH 40V 60A 8TDSON, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Half Bridge), Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 52W (Tc), Drain to Source Voltage (Vdss): 40V, Current - Continuous Drain (Id) @ 25°C: 60A (Tj), Input Capacitance (Ciss) (Max) @ Vds: 1027pF @ 25V, Rds On (Max) @ Id, Vgs: 5mOhm @ 30A, 10V, Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V, Vgs(th) (Max) @ Id: 3V @ 13µA, Supplier Device Package: PG-TDSON-8-57, Grade: Automotive, Part Status: Active, Qualification: AEC-Q101.
Інші пропозиції IAUC60N04S6N050HATMA1 за ціною від 39.86 грн до 118.57 грн
| Фото | Назва | Виробник | Інформація |
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IAUC60N04S6N050HATMA1 | Виробник : Infineon Technologies |
MOSFET MOSFET_(20V 40V) |
на замовлення 3066 шт: термін постачання 21-30 дні (днів) |
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| IAUC60N04S6N050HATMA1 | Виробник : Infineon Technologies |
Trans MOSFET N-CH 4 |
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| IAUC60N04S6N050HATMA1 | Виробник : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 16A; Idm: 171A; 52W Type of transistor: N-MOSFET Technology: OptiMOS™ 6 Polarisation: unipolar Drain-source voltage: 40V Drain current: 16A Pulsed drain current: 171A Power dissipation: 52W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 6.5mΩ Mounting: SMD Gate charge: 17nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 5000 шт |
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IAUC60N04S6N050HATMA1 | Виробник : Infineon Technologies |
Description: MOSFET 2N-CH 40V 60A 8TDSON Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 52W (Tc) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 60A (Tj) Input Capacitance (Ciss) (Max) @ Vds: 1027pF @ 25V Rds On (Max) @ Id, Vgs: 5mOhm @ 30A, 10V Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V Vgs(th) (Max) @ Id: 3V @ 13µA Supplier Device Package: PG-TDSON-8-57 Grade: Automotive Part Status: Active Qualification: AEC-Q101 |
товар відсутній |
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| IAUC60N04S6N050HATMA1 | Виробник : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 16A; Idm: 171A; 52W Type of transistor: N-MOSFET Technology: OptiMOS™ 6 Polarisation: unipolar Drain-source voltage: 40V Drain current: 16A Pulsed drain current: 171A Power dissipation: 52W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 6.5mΩ Mounting: SMD Gate charge: 17nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |