IDC08D120T6MX1SA2 Infineon Technologies

Description: DIODE GP 1.2KV 10A WAFER, Packaging: Bulk, Package / Case: Die, Mounting Type: Surface Mount, Speed: Standard Recovery >500ns, > 200mA (Io), Technology: Standard, Current - Average Rectified (Io): 10A, Supplier Device Package: Sawn on foil, Operating Temperature - Junction: -40°C ~ 175°C, Part Status: Obsolete, Voltage - DC Reverse (Vr) (Max): 1200 V, Voltage - Forward (Vf) (Max) @ If: 2.05 V @ 10 A, Current - Reverse Leakage @ Vr: 2.7 µA @ 1200 V.